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MicroChemicals Silicon, Quartz, Glass and Fused Silica Wafer Stock List (Revised: 22.11.2024 19:40 MEZ)
4 Inch Silicon + SiO2 Wafers (Thermal Oxidation)
| Qual. | Material | Size
(inch) | Orien-
tation | Polished | Thick-
ness (μm) | Doping | Resistivity
(ohm cm) | Coating | # available
now1/soon2 | Article Number
(WebShop) | |
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| Prime | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 20 | Boron | 0.001 - 0.005 | 290 nm | 144 / 144 | WTD40525205B1050S291 | | | | Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 20 μm, (100), 1-side polished, p-type (Boron), TTV < 5 μm, Bow/Warp < 30 μm, 0.001 - 0.005 Ohm cm, 290 nm SiO2 (+/- 7 %), particles: <10 @ 0.5 μm | | | Price/wafer (net): € 36.00 (5 wafers), € 30.00 (10 wafers), € 23.00 (25 wafers), € 21.50 (50 wafers), € 20.00 (100 wafers), € 19.00 (200 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 20 | Boron | 0.001 - 0.005 | 290 nm | 25 / 25 | WTD40525205B1050S293 | | | | Si + dry SiO2 wafer 4 inch, thickness = 525 ± 20 μm, (100), 1-side polished, p-type (Boron), TTV < 5 μm, Bow/Warp < 30 μm, 0.001 - 0.005 Ohm cm, 290 nm SiO2 (+/- 7 %), !! surface shows some kind of "haze" which can be cleaned !! | | | Price/wafer (net): on request | |
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| Prime | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 20 | Boron | 0.001 - 0.005 | 290 nm | 13 / 13 | WTD40525205B1050S294 | | | | Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 20 μm, (100), 1-side polished, p-type (Boron) TTV < 5 μm, 0.001 - 0.005 Ohm cm, 290 nm SiO2, Metallized: Ti: 10 nm and Pt: 100 nm, small individual defects in the layer possible but not mandatory
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| Prime | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 25 | Arsenic | 0.001 - 0.005 | 200 nm | 13 / 13 | WTD40525250A1050S201 | | | | Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, n-type (Arsenic) TTV < 10 μm, 0.001 - 0.005 Ohm cm, 200 nm SiO2 | | | Price/wafer (net): € 33.00 (5 wafers), € 27.00 (10 wafers), € 21.00 (25 wafers), € 20.00 (50 wafers), € 19.00 (100 wafers), € 18.00 (200 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 25 | Boron | 0.001 - 0.005 | 90 nm | 66 / 66 | WTD40525250B1050S091 | | | | Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron) TTV < 10 μm, 0.001 - 0.005 Ohm cm, 90 nm SiO2 +/- 20 %, laser marking on polished side (MCPHD002-XXX, XXX = 001-999) | | | Price/wafer (net): € 36.00 (5 wafers), € 30.00 (10 wafers), € 23.50 (25 wafers), € 22.00 (50 wafers), € 20.00 (150 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 25 | Boron | 0.001 - 0.005 | 280 nm | 266 / 266 | WTD40525250B1050S281 | | | | Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron) TTV < 10 μm, 0.001 - 0.005 Ohm cm, 285 nm SiO2 +/- 5 %, laser marking on polished side (MCPHD004-XXX, XXX = 001-999) | | | Price/wafer (net): € 37.00 (5 wafers), € 31.00 (10 wafers), € 24.50 (25 wafers), € 23.00 (50 wafers), € 21.00 (150 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 25 | Boron | 1 - 10 | 100 nm | 170 / 170 | WTD40525250B1314S102 | | | | Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron) TTV < 10 μm, 1 - 10 Ohm cm, 100 nm SiO2 | | | Price/wafer (net): € 33.20 (5 wafers), € 27.60 (10 wafers), € 22.00 (25 wafers), € 20.00 (50 wafers), € 19.00 (100 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 25 | Boron | 1 - 10 | 200 nm | 366 / 366 | WTD40525250B1314S201 | | | | Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron) TTV < 10 μm, 1 - 10 Ohm cm, 200 nm SiO2 | | | Price/wafer (net): € 32.00 (5 wafers), € 26.00 (10 wafers), € 20.00 (25 wafers), € 19.00 (50 wafers), € 18.00 (100 wafers), € 17.00 (200 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 25 | Phosphor | 1 - 10 | 100 nm | 74 / 74 | WTD40525250P1314S101 | | | | Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, n-type (Phosphor) TTV < 10 μm, 1 - 10 Ohm cm, 100 nm SiO2 | | | Price/wafer (net): € 32.00 (5 wafers), € 26.00 (10 wafers), € 20.00 (25 wafers), € 19.00 (50 wafers), € 18.00 (100 wafers), € 17.00 (200 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 25 | Boron | 0.001 - 0.01 | 90 nm | 48 / 48 | WTD40525255B1011S091 | | | | Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron) TTV < 5 μm, 0.001 - 0.01 Ohm cm, 90 nm SiO2 | | | Price/wafer (net): € 34.00 (5 wafers), € 28.00 (10 wafers), € 22.00 (25 wafers), € 21.00 (50 wafers), € 20.00 (100 wafers), € 19.50 (150 wafers) (plus packaging / shipping) | |
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| Dummy3 | Si + SiO2 (dry) | 4 | (100) | one-side | 525 ± 25 | Boron | 0.001 - 0.005 | 280 nm | 234 / 234 | WTV40525250B1050S281 | | | | Dummy Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron) TTV < 10 μm, 0.001 - 0.005 Ohm cm, 285 nm SiO2 +/- 5 %, laser marking on polished side (MCPHD003-XXX, XXX = 001-999), not-particle-specified, tiny defects in the SiO2 film | | | Price/wafer (net): € 20.00 (25 wafers), € 18.00 (50 wafers), € 16.00 (100 wafers), € 14.00 (200 wafers) (plus packaging / shipping). One carrier with 9 wafer is also available. | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | double-side | 525 ± 15 | Boron | 1 - 10 | 300 nm | 30 / 30 | WWA40525150B1314SNN2 | | | | Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 15 μm, (100), 2-side polished, p-type (Boron) TTV < 10 μm, 1 - 10 Ohm cm, 300 nm SiO2 | | | Price/wafer (net): € 35.20 (5 wafers), € 29.60 (10 wafers), € 24.00 (25 wafers), € 23.00 (50 wafers), € 22.00 (100 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | double-side | 525 ± 25 | Phosphor | 1 - 10 | 5000 nm | 104 / 104 | WWA40525250P1314SXX1 | | | | Prime Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 2-side polished, n-type (Phosphor), 1 - 10 Ohm cm, 5000 nm SiO2 | | | Price/wafer (net): € 83.20 (5 wafers), € 77.60 (10 wafers), € 72.00 (25 wafers), € 60.00 (50 wafers), € 59.00 (100 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 525 ± 25 | Arsenic | 0.001 - 0.005 | 300 nm | 175 / 175 | WWD40525250A1050S301 | | | | Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, n-type (Arsenic), 0.001 - 0.005 Ohm cm, 300 nm SiO2 | | | Price/wafer (net): € 32.20 (5 wafers), € 26.60 (10 wafers), € 21.00 (25 wafers), € 20.00 (50 wafers), € 19.00 (100 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 525 ± 25 | Boron | 1 - 10 | 300 nm | 231 / 231 | WWD40525250B1314S302 | | | | Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron) TTV < 10 μm, 1 - 10 Ohm cm, 300 nm SiO2 | | | Price/wafer (net): € 32.00 (5 wafers), € 26.00 (10 wafers), € 20.00 (25 wafers), € 19.00 (50 wafers), € 18.00 (100 wafers), € 17.00 (200 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 525 ± 25 | Boron | 1 - 10 | 500 nm | 361 / 361 | WWD40525250B1314S501 | | | | Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron) TTV < 10 μm, 1 - 10 Ohm cm, 500 nm SiO2 | | | Price/wafer (net): € 31.20 (5 wafers), € 25.60 (10 wafers), € 20.00 (25 wafers), € 18.00 (50 wafers), € 17.00 (100 wafers), € 16.00 (200 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 525 ± 25 | Boron | 1 - 10 | 1000 nm | 180 / 480 | WWD40525250B1314SXX1 | | | | Prime Si + SiO2 (dry/wet/dry)-Wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron) TTV < 10 μm, 1 - 10 Ohm cm, 1000 nm SiO2 | | | Price/wafer (net): € 37.20 (5 wafers), € 31.60 (10 wafers), € 26.00 (25 wafers), € 24.00 (50 wafers), € 22.00 (100 wafers), € 20.00 (200 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 525 ± 25 | Boron | 1 - 10 | 1500 nm | 243 / 243 | WWD40525250B1314SXX3 | | | | Prime Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 1500 nm SiO2 | | | Price/wafer (net): € 39.20 (5 wafers), € 33.60 (10 wafers), € 28.00 (25 wafers), € 27.00 (50 wafers), € 26.00 (100 wafers), € 25.00 (200 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 525 ± 25 | Boron | 1 - 10 | 2000 nm | 120 / 120 | WWD40525250B1314SXX6 | | | | Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 2000 nm SiO2 | | | Price/wafer (net): € 47.20 (5 wafers), € 41.60 (10 wafers), € 36.00 (25 wafers), € 34.50 (50 wafers), € 33.00 (100 wafers), € 32.00 (200 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 525 ± 25 | Boron | 1 - 10 | 5000 nm | 62 / 62 | WWD40525250B1314SXX8 | | | | Prime Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, p-type (Boron), TTV < 10 μm, 1 - 10 Ohm cm, 5000 nm SiO2 | | | Price/wafer (net): on request | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 525 ± 25 | Phosphor | 1 - 10 | 1000 nm | 199 / 199 | WWD40525250P1314SXX1 | | | | Prime Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, n-type (Phosphor), 1 - 10 Ohm cm, 1000 nm SiO2 | | | Price/wafer (net): € 39.20 (5 wafers), € 33.60 (10 wafers), € 28.00 (25 wafers), € 26.00 (50 wafers), € 24.00 (100 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 525 ± 25 | Phosphor | 1 - 10 | 2280 nm | 50 / 50 | WWD40525250P1314SXX2 | | | | Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, n-type (Phosphor), TTV < 10 μm, 1 - 10 Ohm cm, 2280 nm SiO2 +/- 5 % | | | Price/wafer (net): € 61.00 (5 wafers), € 55.00 (10 wafers), € 49.00 (25 wafers), € 46.00 (50 wafers), € 44.00 (100 wafers), € 42.00 (200 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 525 ± 25 | | 1000 - 100000 | 300 nm | 77 / 77 | WWD40525250X1618S301 | | | | Prime FZ Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (100), 1-side polished, TTV < 10 μm, intrinsic (undoped) 1000 - 100000 Ohm cm, 300 nm thermal SiO2 dry/wet/dry, 1 SEMI Flat | | | Price/wafer (net): € 69.20 (5 wafers), € 63.60 (10 wafers), € 58.00 (25 wafers), € 54.00 (50 wafers), € 50.00 (100 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (100) | one-side | 625 ± 25 | Phosphor | 10 - 20 | 1000 nm | 149 / 149 | WWD40625250P1424SXX1 | | | | Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 625 ± 25 μm, (100), 1-side polished, n-type (Phosphor) TTV < 10 μm, 10 - 20 Ohm cm, 1000 nm SiO2 +/- 10 %, single flat 32,5 +/- 2,5 mm, no second flat | | | Price/wafer (net): € 38.50 (5 wafers), € 32.50 (10 wafers), € 26.50 (25 wafers), € 24.50 (50 wafers), € 22.50 (100 wafers), € 18.50 (300 wafers) (plus packaging / shipping) | |
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| Prime | Si + SiO2 (wet) | 4 | (111) | one-side | 525 ± 25 | Phosphor | 1 - 10 | 1000 nm | 1 / 1 | WWF40525250P1314SXX1 | | | | Prime Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 μm, (111), 1-side polished, n-type (Phosphor) TTV < 10 μm, 1 - 10 Ohm cm, 1000 nm SiO2 | | | Price/wafer (net): € 37.20 (5 wafers), € 31.60 (10 wafers), € 26.00 (25 wafers), € 24.00 (50 wafers), € 22.00 (100 wafers) (plus packaging / shipping) | |
Interested in an offer? Please send us an e-mail with the article numbers(s) (20-digit code in the right column of the table above) and number to info@microchemicals.com
1 available when this list has been revised
2 available + ordered (= available in typically few weeks)
3 Wider specified, rather cheap wafers for e. g. resist coating tests or start-up experiments for new litho-processes.
4 prices subject to change; while stocks last.
5 possibly available on demand within approx. 1 - 2 weeks.
We try to revise this stock list daily or weekly, but we cannot guarantee that it's always up-to-date.
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