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Si + wet SiO2 wafer 4 inch 525 um (100) SSP P-doped

WWD40525250P1314SXX1

Prime Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, n-type (Phosphor), 1 - 10 Ohm cm, 1000 nm SiO2

Stock: 199

From €24.00*

Si + wet SiO2 wafer 4 inch 525 um (100) DSP P-doped

WWA40525250P1314SXX1

Prime Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 2-side polished, n-type (Phosphor), 1 - 10 Ohm cm, 5000 nm SiO2

Stock: 29

From €59.00*

Si + wet SiO2 wafer 4 inch 525 µm (100), SSP,B-doped

WWD40525250B1314SXX1

Prime Si + SiO2 (dry/wet/dry)-Wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 1000 nm SiO2

Stock: 487

From €18.00*

Si + wet SiO2 wafer 4 inch 525 um (111) SSP P-doped

WWF40525250P1314SXX1

Prime Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (111), 1-side polished, n-type (Phosphor) TTV < 10 µm, 1 - 10 Ohm cm, 1000 nm SiO2

Stock: 1

From €22.00*

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