Si + wet SiO2 wafer 4 inch 525 um (100) SSP B-doped
Prime Si + SiO2 (wet) (0 nm) wafer 525 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€58.00*
|
| To 9 |
€47.20*
|
| To 24 |
€41.60*
|
| To 49 |
€36.00*
|
| To 99 |
€34.50*
|
| To 199 |
€33.00*
|
| From 200 |
€32.00*
|
Send us an inquiry if you have any questions about articles, purchase quantities, delivery times or sample requests!
Product number:
WWD40525250B1314SXX6
Product information "Si + wet SiO2 wafer 4 inch 525 um (100) SSP B-doped"
Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 2000 nm SiO2
| Diameter (round): | 4 inch |
|---|---|
| Material: | Si + SiO2 (wet) (0 nm) |
| Orientation: | 100 |
| Quality: | Prime |
| Resistivity: | 1 - 10 Ohm cm |
| SiO2 thickness: | 1 - 2 µm |
| Surface: | 1-side polished |
| Thickness: | 501 - 700 µm |