Si + wet SiO2 wafer 2 inch 279 um (100) SSP B-doped

Prime Si + SiO2 (wet) (500 nm) wafer 279 µm 100

Quantity	Unit price
To 4	€30.40*
To 9	€21.40*
To 24	€16.80*
To 49	€12.00*
To 99	€11.00*
To 199	€10.50*
From 200	€10.00*

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Product number: WWD20279250B1314S501

Product information "Si + wet SiO2 wafer 2 inch 279 um (100) SSP B-doped"

Prime Si + wet SiO2 wafer 2 inch, thickness = 279 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 10 Ohm cm, 500 nm dry/wet/dry thermally grown SiO2

Diameter (round):	2 inch
Material:	Si + SiO2 (wet) (500 nm)
Orientation:	100
Quality:	Prime
Resistivity:	1 - 10 Ohm cm
SiO2 thickness:	401 - 500 nm
Surface:	1-side polished
Thickness:	201 - 300 µm