Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
Dummy Si + SiO2 (dry) (280 nm) wafer 525 µm 100
| Quantity | Unit price |
|---|---|
| To 49 |
€20.00*
|
| To 99 |
€18.00*
|
| To 199 |
€16.00*
|
| From 200 |
€14.00*
|
Send us an inquiry if you have any questions about articles, purchase quantities, delivery times or sample requests!
Product number:
WTV40525250B1050S281
Product information "Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped"
Dummy Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.005 Ohm cm, 285 nm SiO2 +/- 5 %, laser marking on polished side (MCPHD003-XXX, XXX = 001-999), not-particle-specified, tiny defects in the SiO2 film
| Diameter (round): | 4 inch |
|---|---|
| Material: | Si + SiO2 (dry) (280 nm) |
| Orientation: | 100 |
| Quality: | Dummy |
| Resistivity: | 0 - 0.01 Ohm cm |
| SiO2 thickness: | 201 - 300 nm |
| Surface: | 1-side polished |
| Thickness: | 501 - 700 µm |