Si + dry SiO2 wafer 3 inch 200 um (100) DSP

Prime Si + SiO2 (dry) (300 nm) wafer 200 µm 100

Quantity	Unit price
To 4	€66.00*
To 9	€58.00*
To 24	€50.00*
To 49	€44.00*
To 99	€42.00*
To 199	€40.00*
From 200	€38.00*

Prices excl. VAT plus shipping costs

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Product number: WTA30200250X1718S301

Product information "Si + dry SiO2 wafer 3 inch 200 um (100) DSP"

Prime FZ-Si + dry SiO2 wafer 3 inch, thickness = 200 ± 25 µm, (100), 2-side polished, TTV < 10 µm, 10000 - 100000 Ohm cm, (> 10.000), 300 nm SiO2, 2 SEMI flats

Diameter (round):	3 inch
Material:	Si + SiO2 (dry) (300 nm)
Orientation:	100
Quality:	Prime
Resistivity:	> 10000 Ohm cm
SiO2 thickness:	201 - 300 nm
Surface:	2-side polished
Thickness:	100 - 200 µm