CZ-Si wafer 4 inch 525 um (100) SSP P-doped

Prime CZ-Si wafer 525 µm 100
Quantity Unit price
To 4
€35.60*
To 9
€24.80*
To 24
€19.20*
To 49
€13.60*
To 99
€13.20*
To 299
€12.80*
From 300
€12.50*
Wafer
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Product number: WSD40525250P1314XNN2
Product information "CZ-Si wafer 4 inch 525 um (100) SSP P-doped"

Prime CZ-Si wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, n-type (Phosphor) TTV < 10 µm, 1 - 10 Ohm cm, 2 SEMI Flats

Diameter (round): 4 inch
Material: CZ-Si
Orientation: 100
Quality: Prime
Resistivity: 1 - 10 Ohm cm
Surface: 1-side polished
Thickness: 501 - 700 µm