CZ-Si wafer 4 inch 525 um (100) SSP B-doped

Prime CZ-Si wafer 525 µm 100
Quantity Unit price
To 4
€32.00*
To 9
€26.00*
To 24
€20.00*
To 49
€14.00*
To 99
€13.50*
To 299
€13.20*
From 300
€12.80*
Wafer
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Product number: WSD40525250B5314SNN1
Product information "CZ-Si wafer 4 inch 525 um (100) SSP B-doped"

Prime CZ-Si wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 5 - 10 Ohm cm

Diameter (round): 4 inch
Material: CZ-Si
Orientation: 100
Quality: Prime
Resistivity: 1 - 10 Ohm cm
Surface: 1-side polished
Thickness: 501 - 700 µm