CZ-Si wafer 4 inch 525 um (100) SSP B-doped
Prime CZ-Si wafer 525 µm 100
€10.80*
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Product number:
WSD40525205B1324SNN1
Product information "CZ-Si wafer 4 inch 525 um (100) SSP B-doped"
Prime CZ-Si wafer 4 inch, thickness = 525 ± 20 µm, (100), 1-side polished, p-type (Boron), TTV < 5 µm, 1 - 20 Ohm cm, Laser-marking on polished side: CEITEC-MC01-XXX (xxx = 000 ... 999)
| Diameter (round): | 4 inch |
|---|---|
| Material: | CZ-Si |
| Orientation: | 100 |
| Quality: | Prime |
| Resistivity: | 1 - 10 Ohm cm |
| Surface: | 1-side polished |
| Thickness: | 501 - 700 µm |