Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped
Prime Si + Si3N4 (30 nm) wafer 525 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€64.00*
|
| To 9 |
€53.20*
|
| To 24 |
€47.60*
|
| To 49 |
€42.00*
|
| From 50 |
€40.00*
|
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Product number:
WNA40525155B1314S031
Product information "Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped"
Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 15 µm, (100), 2-side polished, p-type (Boron) TTV < 5 µm, 1 - 10 Ohm cm, 30 nm low-stress LPCVD Si3N4 on both wafer sides
| Diameter (round): | 4 inch |
|---|---|
| Material: | Si + Si3N4 (30 nm) |
| Orientation: | 100 |
| Quality: | Prime |
| Resistivity: | 1 - 10 Ohm cm |
| Si3N4 thickness: | 0 - 100 nm |
| Surface: | 2-side polished |
| Thickness: | 501 - 700 µm |