Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped
Prime Si + Si3N4 (0 nm) wafer 380 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€94.00*
|
| To 9 |
€83.00*
|
| To 24 |
€78.00*
|
| To 49 |
€72.00*
|
| To 99 |
€70.00*
|
| From 100 |
€68.00*
|
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Product number:
WNA40380155B1314SXX1
Product information "Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped"
Prime CZ-Si + Si3N4 wafer 4 inch, thickness = 380 ± 15 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 1000 nm LPCVD low-stress Si3N4 on both sides
| Diameter (round): | 4 inch |
|---|---|
| Material: | Si + Si3N4 (0 nm) |
| Orientation: | 100 |
| Quality: | Prime |
| Resistivity: | 1 - 10 Ohm cm |
| Si3N4 thickness: | 701 - 1000 nm |
| Surface: | 2-side polished |
| Thickness: | 301 - 400 µm |