Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped
Prime Si + Si3N4 (150 nm) wafer 380 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€62.00*
|
| To 9 |
€52.00*
|
| To 24 |
€46.00*
|
| To 49 |
€40.00*
|
| To 99 |
€38.00*
|
| From 100 |
€37.00*
|
Send us an inquiry if you have any questions about articles, purchase quantities, delivery times or sample requests!
Product number:
WNA40380155B1314S151
Product information "Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped"
Prime CZ-Si + Si3N4 wafer 4 inch, thickness = 380 ± 15 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 145 nm LPCVD Si3N4 on both sides
| Diameter (round): | 4 inch |
|---|---|
| Material: | Si + Si3N4 (150 nm) |
| Orientation: | 100 |
| Quality: | Prime |
| Resistivity: | 1 - 10 Ohm cm |
| Si3N4 thickness: | 100 - 200 nm |
| Surface: | 2-side polished |
| Thickness: | 301 - 400 µm |