Acetic Acid 100 % - 2.50 l - VLSI
TESV1025
Acetic Acid
CH3COOH
General Information
Acetic Acid as surfactant and buffer is a commonly used additive for various etching mixtures.
We supply Acetic Acid (99 %) in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.
Further Information
MSDS:
Safety Data Sheet Acetic Acid (VLSI) 100 % english
Sicherheitsdatenblatt Essigsäure (VLSI) 100 % german
Specs:
Specs Acetic Acid (VLSI) 100 %
Application Notes:
Wet Etching english
Nasschemisch Ätzen german
Acetone MC - 2.50 l - ULSI - EUD/EVE!
MACU1025
Manufacturer:
MicroChemicals GmbH
|
Bottle size:
2.50 l
|
Purity:
ULSI
Acetone
CH3COCH3
General Information
Acetone removes organic impurities from substrates and is well suited for greasy/oily contaminations. However, its large vapour pressure causes rapid drying together with a resorption of the contaminants on the substrate. Therefore an immediately subse¬quent rinsing step is recommended with a higher boiling solvent such as isopropanol.
Acetone is not well-suited as lift-off medium due to the high fire danger when heated and the trend of particles to be lifted to resorb onto the substrate.
Product Properties
Density: 0.79 g/cm^3
Melting point: 95°C
Boiling point: 56°C
Flash point: < -18°C
Vapour pressure @ 20°C: 244 hPa
Acetone Molecule
Further Information
MSDS:
Safety Data Sheet Acetone english (TECHNIC France)
Sicherheitsdatenblatt Aceton german (TECHNIC France)
Safety Data Sheet Acetone english (MicroChemicals GmbH)
Sicherheitsdatenblatt Aceton german (MicroChemicals GmbH)
Specs:
Specs Acetone ULSI (TECHNIC France)
Specs Acetone VLSI (TECHNIC France)
Specs Acetone ULSI (MicroChemicals GmbH)
Application Notes:
Solvents english
Lösemittel german
AF32 eco 8 inch 500 um DSP
WGS80500100X0000SNN1
Borosilicate 8 inch, thickness = 500 ± 10 µm, , 2-side polished, TTV < 10 µm
Ammonium hydroxide solution 28-30% - 2.50 l - VLSI - EVE/EUD!
HAMV1025
Ammonia Solution
NH4OH
General Information
Mixed with H2O2, Ammonia is an ingredient of many etching mixtures for metals such as copper, silver or aluminum.
Our Ammonia solution (28 - 30%) is available in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data Sheet Ammonium Hydroxide Solution (VLSI) 28-30% english
Specs:
Specs Ammonium Hydroxide Solution (VLSI) 28-30%
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Annual Calendar
€0.00*
Wandkalender
Calendar
70 x 100cm
We send our wall calendars to our customers every year. If you are interested in a 70 x 100cm annual calendar, please add it to your order or just fill in the form.
Au etch 200 - 5.00 l
nbtaue2005
Bottle size:
5.00 l
Au etch 200
Gold Etchant
General Information
Au etch 200 is a non-hazardous, cyanide-free, slightly alkaline etchant for Au. The etchant is used for the wet-chemical patterning of Au layers with selectivity to metals like Pt, Ni, Cr, Ti, Al. Common areas of use for semiconductor fabrication or micro system technology.
Product Properties
Low undercut (in the range of the layer thickness), minimum feature size < 1 µm
Selectivity to many materials, e.g. common metals used in electroplating industry
Available in different purity grades
Compatible to resist masking
Not hazardous substance and easy to handle
Selectivity
Au etch 200 is compatible/etches selective to following materials:
Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Pt, Ni, Cr, Ti, Al, Ta
Metals: attacked Au, Cu
Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
Under normal condition, the etching rate is around 40 nm/min (at 50°C). The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%.
Further Information
MSDS:
Safety Data Sheet Au etch 200 english
Sicherheitsdatenblatt Au etch 200 german
TDS:
Technical Data Sheet Au etch 200 english
Technical Data Sheet Au etch 200 german
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Wet Etching of Metals english
Nasschemisches Ätzen von Metallen german
Further Information about Processing
AX 100 - 5.00 l
nbtax1005
Bottle size:
5.00 l
AX 100
Activator
General Information
AX 100 is an acidic solution for activating and pretreating seed layers and metallic surfaces for electroplating, on which a direct metallization may cause problems regarding the adhesive strength. This applies e.g. for the electroplating of Au on Ni surfaces or direct electroplating on Ti or TiW layers.
AX 100 activates metallic surfaces before electroplating and allows a better adhesive strength of electroplated layers on metallic surfaces, which tend to oxidation.
Common fields of application are semiconductor fabrication and microsystem technology.
Product Properties
Low or none etch attack on metallic surfaces
Compatible to many materials, e.g. common metals used in electroplating industry
Compatible to resist masking
Not poisonous substance and easy to handle
Moderate operation temperature of about 40°C
Selectivity
AX 100 is compatible/etches selective to following materials:
Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Ni, Ti, TiW, Ta, Cu
Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data Sheet AX 100 english
Sicherheitsdatenblatt AX 100 german
TDS:
Technical Data Sheet AX 100 english
Application Notes:
Further Information about Processing
AZ 100 Remover - 5.00 l
1000100
AZ® 100 Remover
Universal Photoresist Stripper
General Information
AZ®100 Remover is based on solvent and amine (alkaline). AZ®100 Remover is used for photoresist stripping with low attack to aluminium. Low hazard is achieved by the use of ethanol amine.
Low evaporation rate allows the use at elevated temperatures (up to 80°C), high efficiency (>3000 wafer per litre) helps saving costs. Where attack to aluminium is of no concern, it may even be diluted with water.
AZ®100 Remover is not compatible with AZ® nLof 2070 (AZ® nLof 2000 series) resists and other heavily cross linked resists.
Product Properties
Density (at 25°C): 0.955 kg/l
Color (Alpha): max. 20
Flashpoint (AP): 72°C
Normality (potentiometric): 3.1 mol/l
Boiling range: 159-194°C
Further Information
MSDS:
Safety Data Sheet AZ® 100 Remover english
Sicherheitsdatenblatt AZ® 100 Remover german
TDS:
Technical Data Sheet AZ® 100 Remover english
Application Notes:
Photoresist removal english
Fotolack entfernen german
AZ 10XT Photoresist (220cP) - 3.785 l
1A10XT220
AZ® 10XT (220CPS)
Thick Resists for High Resolution
General Information
Compared to the AZ® 4500 series, the AZ® 10XT resists have a lower optical absorption. This simplifies the exposure of (also very) thick resist films. Therefore, in combination with the missing g-line sensitivity, the AZ® 10XT series needs a higher exposure time under broadband condition, and reveals a lower development rate as compared to AZ® 4500 films processed under the same conditions. On the other hand, the AZ® 10XT shows a very high aspect ratio and resolution.
For lower resist film thicknesses we recommend a dilution with PGMEA = AZ® EBR Solvent. The following resist film thicknesses refer to 4000 rpm under standard conditions:
4.0 µm: 100g AZ® 10XT + 13g PGMEA
3.0 µm: 100g AZ® 10XT + 23g PGMEA
2.0 µm: 100g AZ® 10XT + 42g PGMEA
1.5 µm: 100g AZ® 10XT + 55g PGMEA
1.0 µm: 100g AZ® 10XT + 88g PGMEA
The AZ® 10XT is a PFOS-free alternative to the AZ® 9260, which was discontinued in 2019. Viscosity and process parameters are identical to the former AZ® 9260.
3.0 µm lines in 12 µm thick AZ® 10XT Ultratech 1500 Exposure, AZ® 400K Developer 1:4 (260s spray)
Product Properties
Good resist adhesion to all common substrate materials
Compatible with all common developers (KOH- or TMAH-based)
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
h- and i-line sensitive (approx. 320 - 410 nm)
Resist film thickness range approx. 5 - 30 µm
Developers
The recommended developers for the AZ® 10XT photoresist are AZ® 400K 1:4 or AZ® 726 MIF. In case of very thick resist films, a rather strong developer concentration such as AZ® 400K 1:3.5 - 1:3.0 might be reasonable for required short development times.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning the AZ® EBR Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 10XT (220cps) english
Sicherheitsdatenblatt AZ® 10XT (220cps) german
TDS:
Technical Data Sheet AZ® 10XT (220cps) english
Application Notes:
Further Information about Photoresist Processing
AZ 10XT Photoresist (520cP) - 3.785 l
1A010XT00
Bottle size:
3.785 l
AZ® 10XT (520CPS)
Thick Resists for High Resolution
General Information
Compared to the AZ® 4500 series, the AZ® 10XT resists have a lower optical absorption. This simplifies the exposure of (also very) thick resist films. Therefore, in combination with the missing g-line sensitivity, the AZ® 10XT series needs a higher exposure time under broadband condition, and reveals a lower development rate as compared to AZ® 4500 films processed under the same conditions. On the other hand, the AZ® 10XT shows a very high aspect ratio and resolution.
For lower resist film thicknesses we recommend a dilution with PGMEA = AZ® EBR Solvent. The following resist film thicknesses refer to 4000 rpm under standard conditions:
4.0 µm: 100g AZ® 10XT + 13g PGMEA
3.0 µm: 100g AZ® 10XT + 23g PGMEA
2.0 µm: 100g AZ® 10XT + 42g PGMEA
1.5 µm: 100g AZ® 10XT + 55g PGMEA
1.0 µm: 100g AZ® 10XT + 88g PGMEA
The AZ® 10XT is a PFOS-free alternative to the AZ® 9260, which was discontinued in 2019. Viscosity and process parameters are identical to the former AZ® 9260.
3.0 µm lines in 12 µm thick AZ® 10XT Ultratech 1500 Exposure, AZ® 400K Developer 1:4 (260s spray)
Product Properties
Good resist adhesion to all common substrate materials
Compatible with all common developers (KOH- or TMAH-based)
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
h- and i-line sensitive (approx. 320 - 410 nm)
Resist film thickness range approx. 5 - 30 µm
Developers
The recommended developers for the AZ® 10XT photoresist are AZ® 400K 1:4 or AZ® 726 MIF. In case of very thick resist films, a rather strong developer concentration such as AZ® 400K 1:3.5 - 1:3.0 might be reasonable for required short development times.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning the AZ® EBR Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 10XT (520cps) english
Sicherheitsdatenblatt AZ® 10XT (520cps) german
TDS:
Technical Data Sheet AZ® 10XT (520cps) english
Application Notes:
Further Information about Photoresist Processing
AZ 125nXT-10B Photoresist - 3.785 l
1125nXT10B
Bottle size:
3.785 l
AZ® 125nXT-10B
Ultra-Thick Negative Resist for Plating
General Information
AZ® 125nXT-10B for 25 - 200 µm Resist Film Thickness (i-line)
The AZ® 125nXT-10B is a negative resist for film thicknesses up to over 100 µm with at the same time very high sidewall steepness. And even more (1 mm resist film thickness realized!) with very steep sidewalls and special coating techniques It’s cross-linking and very good resist adhesion make it stable in all conventional electroplating applications. This resist does not require a post exposure bake.
20 µm lines at 60 µm resist film thickness.
15 µm holes at 60 µm resist film thickness.
80 µm plated CuNi image.
Product Properties
30 – 100 µm resist film thickness via single-coating
Up to 1 mm resist film thickness possible
Aqueous alkaline developers (e. g. AZ® 326/726/2026 MIF)
No post exposure bake, photo-polymerization during exposure
No rehydration required, no N2-formation during exposure
Very good adhesion, no underplating
Wet stripping processes (e. g. TechniStrip P1316)
Optimized for electroplating, wet- and dry etching
Developers
We recommend the TMAH-based, ready-to-use AZ® 2026 MIF Developer. AZ® 326 MIF and AZ® 726 MIF are possible as well.
Removers
The recommended stripper for the AZ® 125nXT-10B is the NMP-free TechniStrip P1316, in case of alkaline sensitive substrate materials use the TechniStrip P1331 or TechniStrip MLO07.
Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of cross-linking are not too high. Generally, heating the removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick resist films.
Resist pattern and plated structures attained with a 60 and 120 µm thick AZ® 125nXT.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or AZ® EBR Solvent 70/30.
Further Information
MSDS:
Safety Data Sheet AZ® 125nXT-10B english
Sicherheitsdatenblatt AZ® 125nXT-10B german
TDS:
Technical Data Sheet AZ® 125nXT-10B english
Application Notes:
Further Information about Photoresist Processing
AZ 12XT-20PL-10 Photoresist - 3.785 l
1A012XT1000
Bottle size:
3.785 l
AZ® 12XT-20PL-10
Chemically Amplified Positive Tone Photoresists
General Information
AZ® 12XT for 5 - 15 µm Resist Film Thickness (i-line)
The AZ® 12XT is a chemically amplified thick positive resist with superior photospeed and aspect ratio characterized by its excellent environmental stability and suitability for plating and RIE etc applications. Even for very high resist film thickness AZ® 12XT requires only short softbake times, no delay for rehydration, very small exposure doses due to its chemical amplification and reveals a high development rate.
AZ® 12XT - 2.4mm lines at 10mm film thickness
Product Properties
High thermal stability
Compatible with all common TMAH based developers
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
i-line sensitive (approx. 320 - 390 nm)
Resist film thickness range approx. 5 - 20 µm
Developers
We recommend the TMAH-based developers such as the AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF developer.
Removers
The AZ® 12XT resists are compatible with industry standard solvent based removers such as AZ® 920 Remover, AZ® 100 Remover and DMSO based strippers.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal AZ® EBR Solvent or AZ® EBR70/30 Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 12XT 20PL-10 english
Sicherheitsdatenblatt AZ® 12XT 20PL-10 german
TDS:
Technical Data Sheet AZ® 12XT 20PL-10 english
Application Notes:
Further Information about Photoresist Processing
AZ 12XT-20PL-15 Photoresist - 3.785 l
1A012XT1500
AZ® 12XT-20PL-15
Chemically Amplified Positive Tone Photoresists
General Information
AZ® 12XT for 5 - 15 µm Resist Film Thickness (i-line)The AZ® 12XT is a chemically amplified thick positive resist with superior photospeed and aspect ratio characterized by its excellent environmental stability and suitability for plating and RIE etc applications. Even for very high resist film thickness AZ® 12XT requires only short softbake times, no delay for rehydration, very small exposure doses due to its chemical amplification and reveals a high development rate.
AZ® 12XT - 2.4mm lines at 10mm film thickness
Product Properties
High thermal stability
Compatible with all common TMAH based developers
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
i-line sensitive (approx. 320 - 390 nm)
Resist film thickness range approx. 5 - 20 µm
Developers
We recommend the TMAH-based developers such as the AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF developer.
Removers
The AZ® 12XT resists are compatible with industry standard solvent based removers such as AZ® 920 Remover, AZ® 100 Remover and DMSO based strippers.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal AZ® EBR Solvent or AZ® EBR70/30 Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 12XT 20PL-15 english
Sicherheitsdatenblatt AZ® 12XT 20PL-15 german
TDS:
Technical Data Sheet AZ® 12XT 20PL-15 english
Application Notes:
Further Information about Photoresist Processing
AZ 1505 Photoresist - 3.785 l
1A001505
Bottle size:
3.785 l
AZ® 1505
Positive Thin Resists for Wet Etching
General Information
The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. The high resolution and adhesion of the AZ® 1505 make this resist a commonly used resist mask for Cr etching in photo mask production.
At 4000 rpm, a coating thickness of approx. 500 nm can be attained. A coating thickness of approx. 400 - 800 nm can also be achieved by varying the spin speed.
Product Properties
Improved resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
High development rate
Compatible with all common developers (NaOH-, KOH- or TMAH-based)
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 0.4 – 0.8 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based **AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 1505 Photoresist english
Sicherheitsdatenblatt AZ® 1505 Fotolack german
TDS:
Technical Data Sheet AZ® 1505 Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ 1512 HS Photoresist - 3.785 l
1A001512
Bottle size:
3.785 l
AZ® 1512 HS
Positive Thin Resists for Wet Etching
General Information
The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm.
The very high photo active compound concentration of the AZ® 1512 HS maximises the resist contrast (very high development rate, minimized dark erosion).
At 4000 rpm, a coating thickness of approx. 1.2 µm can be attained. A coating thickness of approx. 1.0 – 1.8 µm can also be achieved by varying the spin speed.
Product Properties
Improved resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
High development rate
Compatible with all common developers (NaOH-, KOH- or TMAH-based)
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 1.0 – 1.8 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF** developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 1512 HS Photoresist english
Sicherheitsdatenblatt AZ® 1512 HS Fotolack german
TDS:
Technical Data Sheet AZ® 1512 HS Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ 1514 H Photoresist - 3.785 l
1A001514
Bottle size:
3.785 l
AZ® 1514H
Positive Thin Resists for Wet Etching
General Information
The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm.
A special resin further improves the resist adhesion on most common (metallic) substrates. Resist film thickness at 4000 rpm approx. 1.4 µm, via variations of the spin speed approx. 1.1 - 2 µm attainable.
Product Properties
Improved resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
High development rate
Compatible with all common developers (NaOH-, KOH- or TMAH-based)
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 1.1 µm – 2.0 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based **AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 1514 H Photoresist english
Sicherheitsdatenblatt AZ® 1514 H Fotolack german
TDS:
Technical Data Sheet AZ® 1514 H Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ 1518 Photoresist - 3.785 l
1A001518
Bottle size:
3.785 l
AZ® 1518
Positive Thin Resists for Wet Etching
General Information
The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm.
The elevated resist film thickness of the AZ® 1518 improve the stability of the resist mask for wet etching processes.
At 4000 rpm, a coating thickness of approx. 1.8 µm can be attained. A coating thickness of approx. 1.5 – 3.0 µm can also be achieved by varying the spin speed.
Product Properties
Improved resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
High development rate
Compatible with all common developers (NaOH-, KOH- or TMAH-based)
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 1.5 µm – 3.0 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 1518 Photoresist english
Sicherheitsdatenblatt AZ® 1518 Fotolack german
TDS:
Technical Data Sheet AZ® 1518 Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ 15nXT Photoresist (115cps) - 3.785 l
15nXT1153
Bottle size:
3.785 l
AZ® 15nXT (115CPS)
Thick Negative Resist for Plating
General Information
AZ® 15nXT (115CPS) for 3 - 6 µm Resist Film Thickness (i-line)
The AZ® 15nXT (115CPS) is a negative resist for film thicknesses up to approx. 6 µm, with a resist film thickness of 3.5 µm at 4000 rpm. Its cross-linking character and its very good resist adhesion make it stable, for example, for all conventional electroplating applications. Up to about 6 µm resist film thickness, the resist sidewalls are vertical, with larger film thicknesses, increasingly negative (undercut) so that the moulded metal structures taper towards the top. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure.
5 µm lines at 10 µm resist film thickness.
5 µm holes at 10 µm resist film thickness.
5 µm plated CuNi image.
3.6 µm plated CuNi image.
Product Properties
3 - 6 µm resist film thickness via single-coating
Aqueous alkaline developers, preferably AZ® 2026 MIF
Excellent adhesion, no underplating
Wide substrate compatibility: Cu, Au, Ti, NiFe, …
Wide plating compatibility: Cu, Ni, Au, …
Standard wet stripping processes
Almost vertical sidewall angles
Developers
We recommend the TMAH-based, ready-to-use AZ® 2026 MIF Developer. AZ® 326 MIF and AZ® 726 MIF are possible as well.
Removers
The recommended stripper for the AZ® 15nXT is the NMP-free, nontoxic TechniStrip NI555 or the AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross linked AZ® 15nXT resist films. Solvents such as NMP or the nontoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly crosslinked resist films.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA.
Further Information
MSDS:
Safety Data Sheet AZ® 15nXT (115CPS) Photoresist english
Sicherheitsdatenblatt AZ® 15nXT (115CPS) Fotolack german
TDS:
Technical Data Sheet AZ® 15nXT (115CPS) Photoresist english
Technical Data Sheet AZ® 15nXT Series english
Application Notes:
Further Information about Photoresist Processing
AZ 15nXT Photoresist (450cps) - 3.785 l
15nXT3
Bottle size:
3.785 l
AZ® 15nXT (450CPS)
Thick Negative Resist for Plating
General Information
AZ® 15nXT (450CPS) for 5 - 20 µm Resist Film Thickness (i-line)
The AZ® 15nXT (450CPS) is a negative resist for film thicknesses up to approx. 20 µm, with a resist film thickness of ~ 6 µm at 4000 rpm. Its cross-linking character and its very good resist adhesion make it stable, for example, for all conventional electroplating applications. Up to about 10 µm resist film thickness, the resist sidewalls are vertical, with larger film thicknesses, increasingly negative (undercut) so that the moulded metal structures taper towards the top. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure.
5 µm lines at 10 µm resist film thickness.
5 µm holes at 10 µm resist film thickness.
5 µm plated CuNi image.
3.6 µm plated CuNi image.
Product Properties
5 - 20 µm resist film thickness via single-coating
Aqueous alkaline developers, preferably AZ® 2026 MIF
Excellent adhesion, no underplating
Wide substrate compatibility: Cu, Au, Ti, NiFe, …
Wide plating compatibility: Cu, Ni, Au, …
Standard wet stripping processes
Almost vertical sidewall angles
Developers
We recommend the TMAH-based, ready-to-use AZ® 2026 MIF Developer. AZ® 326 MIF and AZ® 726 MIF are possible as well.
Removers
The recommended stripper for the AZ® 15nXT is the NMP-free, nontoxic TechniStrip NI555 or the AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® 15nXT resist films.
Solvents such as NMP or the nontoxic substitute DMSO are suited removers, if the resist film thickness and degree of cross-linking are not too high.
Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA.
Further Information
MSDS:
Safety Data Sheet AZ® 15nXT (450CPS) Photoresist english
Sicherheitsdatenblatt AZ® 15nXT (450CPS) Fotolack german
TDS:
Technical Data Sheet AZ® 15nXT (450CPS) Photoresist english
Technical Data Sheet AZ® 15nXT Series english
Information AZ® 15nXT (450CPS) Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ 2026 MIF Developer - 5.00 l
1002026
AZ® 2026 MIF Developer
Metal Ion-free Developers
General Information
AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.
The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio.
However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs.
AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer.
Further Information
MSDS:
Safety Data Sheet AZ® 2026 MIF Developer english
Sicherheitsdatenblatt AZ® 2026 MIF Developer deutsch
TDS:
Technical Data Sheet AZ® 2026 MIF Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack deutsch
AZ 2033 MIF Developer - 5.00 l
1002033
AZ® 2033 MIF Developer
Metal Ion-free Developers
General Information
AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.
The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio.
However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs.
AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer.
Further Information
MSDS:
Safety Data Sheet AZ® 2033 MIF Developer english
Sicherheitsdatenblatt AZ® 2033 MIF Entwickler german
TDS:
Technical Data Sheet AZ® 2033 MIF Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 300 MIF Developer - 5.00 l
1000300
AZ® 300 MIF Developer
Metal Ion-free Developers
General Information
AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.
The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio.
However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs.
AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer.
Further Information
MSDS:
Safety Data Sheet AZ® 300 MIF Developer english
Sicherheitsdatenblatt AZ® 300 MIF Entwickler german
TDS:
Technical Data Sheet AZ® 300 MIF Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 303 Developer - 5.00 l
1000303
AZ® 303 Developer
Inorganic Developers
General Information
AZ® 303 MIC is based on KOH and NaOH and contains strong surfactants. It is designed for positive and aqueous alkaline compatible negative resists, it can be used for AZ® nLof 20XX series resists as well and is the only one TMAH free developer for this resist. AZ® 303 Developer is typically diluted 1:5 - 1:10 with water.
Further Information
MSDS:
Safety Data Sheet AZ® 303 Developer english
Sicherheitsdatenblatt AZ® 303 Entwickler german
TDS:
Technical Data Sheet AZ® 303 Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 326 MIF Developer - 5.00 l
1000326
AZ® 326 MIF Developer
Metal Ion-free Developers
General Information
AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.
The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio.
However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs.
AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer.
Further Information
MSDS:
Safety Data Sheet AZ® 326 MIF Developer english
Sicherheitsdatenblatt AZ® 326 MIF Entwickler german
TDS:
Technical Data Sheet AZ® 326 MIF Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german