TiW Etch 200 - 5.00 l
TiW etch 200
Titan-Wolfram Etchant
General Information
TiW etch 200 is applied as etchant for titanium-for the wet-chemical patterning of TiW layers with selectivity to metals like Au, Pt, Ni, Cr. Usual applications are found in the semiconductor or microsystem technology field for etching adhesion layers or diffusion barriers.
Product Properties
- Low undercut (in the range of the layer thickness), minimum feature size < 1µm
- Selectivity to many materials, e.g. common metals used in electroplating industry
- Compatible to resist masking
Selectivity
TiW etch 200 is compatible/etches selective to following materials:
- Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
- Metals: no attack on Au, Pt, Ni, Cr
- Metals: attacked TiW, Cu
- Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
Under normal condition, the etching rate is around 5nm/min (at room temperature). The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%.
Further Information
MSDS:
Safety Data Sheet TiW etch 200 EN
Sicherheitsdatenblatt TiW etch 200 DE
TDS:
Technical Data Sheet TiW etch 200 EN
Technisches Datenblatt TiW etch 200 DE
Application Notes:
Wet Etching
Nasschemisches Ätzen
Wet Etching of Metals
Nasschemisches Ätzen von Metallen
| Resist compatible: | yes |
|---|---|
| Selectivity (attacked): | Cu, TiW |
| Selectivity (no attack on): | Au, Cr, Ni, Pt |
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