TechniStrip Micro D350 - 2.50 l - ULSI
TECHNIC France
TechniStrip® Micro D350 is an excellent stripper for resists respectively Lift-off media and is a non-toxic substitute for the NMP.
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Product number:
TD350U1025
Manufacturer:
TECHNIC France
Product information "TechniStrip Micro D350 - 2.50 l - ULSI"
TechniStrip Micro D350
DMSO-based Stripper
General Information
TechniStrip® Micro D350 is a DMSO-based stripper and is a very well suited non-toxic substitute for the NMP that is regarded as toxic since a while. As a stripper or as lift off media, TechniStrip® Micro D350 can be regarded as a non toxic alternative to NMP. Mixtures with Cyclopentanone or with MEK even increase the strip performance of this product.
NOTE: The solvent TechniStrip® Micro D350 has a melting point just below room temperature, so it can possi¬bly freeze in storage in cooler rooms. Thawing may require several days, but afterwards the product can still be used as it is. For more details please download the info letter.
Further Information
MSDS:
Safety Data Sheet TechniStrip Micro D350 (ULSI) english
Sicherheitsdatenblatt TechniStrip Micro D350 (ULSI) german
TDS:
Technical Data Sheet TechniStrip Micro D350 (ULSI) english
Specs:
Specs TechniStrip Micro D350 (ULSI)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
| Purity: | ULSI |
|---|---|
| Selectivity (no attack on): | Ag, Al, Au, Cu, Ni, Sn, Ta, TaN, Ti, TiN, TiW |
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Acetone MC - 2.50 l - ULSI - EUD/EVE!
MACU1025
Manufacturer:
MicroChemicals GmbH
|
Bottle size:
2.50 l
|
Purity:
ULSI
Acetone
CH3COCH3
General Information
Acetone removes organic impurities from substrates and is well suited for greasy/oily contaminations. However, its large vapour pressure causes rapid drying together with a resorption of the contaminants on the substrate. Therefore an immediately subse¬quent rinsing step is recommended with a higher boiling solvent such as isopropanol.
Acetone is not well-suited as lift-off medium due to the high fire danger when heated and the trend of particles to be lifted to resorb onto the substrate.
Product Properties
Density: 0.79 g/cm^3
Melting point: 95°C
Boiling point: 56°C
Flash point: < -18°C
Vapour pressure @ 20°C: 244 hPa
Acetone Molecule
Further Information
MSDS:
Safety Data Sheet Acetone english (TECHNIC France)
Sicherheitsdatenblatt Aceton german (TECHNIC France)
Safety Data Sheet Acetone english (MicroChemicals GmbH)
Sicherheitsdatenblatt Aceton german (MicroChemicals GmbH)
Specs:
Specs Acetone ULSI (TECHNIC France)
Specs Acetone VLSI (TECHNIC France)
Specs Acetone ULSI (MicroChemicals GmbH)
Application Notes:
Solvents english
Lösemittel german
n-Butylacetat - 5.00 l - VLSI
TNBAV1050
Butyl Acetate
C6H12O2
General Information
Butyl Acetate is a solvent with a boiling point of 127°C. The vapour pressure at room temperature is 10.7 hPa. Butyl Acetate has the chemical formula C6H12O2. It can be easily solved in nonpolar (organic) solvents, but fairly bad in water (4.3 g per Litre).
Product Properties
Density: 0.88 g/cm3
Melting point: -77°C
Boiling point: 127°C
Flash point: 27°C
Vapour pressure @ 20°C: 10.7 hPa
Further Information
MSDS:
Safety Data Sheet Butyl Acetate (VLSI) english
Sicherheitsdatenblatt Butyl Acetate (VLSI) german
Specs:
Specs Butyl Acetate (VLSI)
Application Notes:
Solvents: Theory and Application english
Lösemittel: Theorie und Anwendung german
Further Information about Processing
Cyclopentanon - 2.50 l - ULSI
TCYU1025
Cyclopentanone
C5H8O
General Information
Cyclopentanone is often used in conjunction with epoxy-based resist formulations, as well as an organic developer for cross-linking photoresists such as e-beam resists.
Product Properties
Density: 0.88 g/cm3
Melting point: -77°C
Boiling point: 127°C
Flash point: 27°C
Vapour pressure @ 20°C: 10.7 hPa
Cyclopentanone Molecule
Further Information
MSDS:
Safety Data Sheet Cyclopentanon (ULSI) english
Sicherheitsdatenblatt Cyclopentanon (ULSI) german
Specs:
Specs Cyclopentanon (ULSI)
Application Notes:
Solvents: Theory and Application english
Lösemittel: Theorie und Anwendung german
Further Information about Processing
DMSO - 2.50 l - ULSI
MDMU1025
DMSO
Dimethyl Sulfoxide
General Information
Due to its low vapour pressure and its water solubility, DMSO is an excellent stripper for resists respectively Lift-off media and is a non-toxic substitute for the NMP, which has been classified as toxic since a while. The optional addition of Cyclopentanone or MEK increases the performance of the stripper for certain applications and significantly lowers the melting point of pure DMSO.
NOTE:
The solvent DMSO (dimethyl sulfoxide) has a melting point just below room temperature, so it can possi¬bly freeze in storage in cooler rooms. Thawing may require several days, but afterwards the product can still be used as it is.
For more details please download the info letter.
Product Properties
Density: 1.1 g/cm3
Melting point: 18°C
Boiling point: 189°C
Flash point: 87°C
Vapour pressure @ 20°C: 0.56 hPa
DMSO Molecule
Further Information
MSDS:
Safety Data Sheet DMSO (ULSI) english
Sicherheitsdatenblatt DMSO (ULSI) german
Specs:
Specs DMSO (ULSI)
Application Notes:
Solvents: Theory and Application english
Lösemittel: Theorie und Anwendung german
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
Isopropyl Alcohol MC - 2.50 l - ULSI
MIPU1025
Manufacturer:
MicroChemicals GmbH
|
Bottle size:
2.50 l
|
Purity:
ULSI
Isopropyl Alcohol
IPA, 2-propanol
General Information
Isopropyl alcohol is well-suited for rinsing contaminated acetone as well as removing particles from surfaces. Therefore, this solvent is often used in the second substrate cleaning step after acetone. Additionally, Isopropyl alcohol is used as additive for anisotropic Si-etching.
Product Properties
Density: 0.78 g/cm3
Melting point: - 88°C
Boiling point: 82°C
Flash point: 13°C
Vapour pressure @ 20°C: 43 hPa
Isopropyl alcohol Molecule*
Further Information
MSDS:
Safety Data Sheet Isopropyl Alcohol (ULSI) english
Sicherheitsdatenblatt Isopropyl Alcohol (ULSI) german
Safety Data Sheet Isopropyl Alcohol (VLSI) english
Sicherheitsdatenblatt Isopropyl Alcohol (VLSI) german
Specs:
Specs Isopropyl Alcohol (ULSI)
Specs Isopropyl Alcohol (VLSI)
Application Notes:
Solvents: Theory and Application english
Lösemittel: Theorie und Anwendung german
Further Information about Processing
MEK - 2.50 l - ULSI - EVE/EUD!
MMEU1025
MEK
Methyl Ethyl Ketone
General Information
MEK (methyl ethyl ketone) with its low boiling point can be used as MicroChemicals additional thinner for spray coating resists, which require a fast resist film drying on the substrate.
Product Properties
Density: 0.81 g/cm3
Melting point: -86°C
Boiling point: 80°C
Flash point: -4°C
Vapour pressure @ 20°C: 105 hPa
MEK Molecule
Further Information
MSDS:
Safety Data Sheet MEK (ULSI) english
Sicherheitsdatenblatt MEK (ULSI) german
Specs:
Specs MEK (ULSI)
Application Notes:
Solvents: Theory and Application english
Lösemittel: Theorie und Anwendung german
Further Information about Processing
Methanol - 2.50 l - ULSI - EVE/EUD!
TMLU1025
Methanol
Methylalcohol
General Information
Methanol can be used for improved substrate cleaning due to its good dissolving power for contaminated acetone in a three-stage cleaning process (acetone à methanol à isopropyl alcohol). Due to its toxicity, its application should be weighed against its potential benefits.
Product Properties
Density: 0.79 g/cm3
Melting point: -98°C
Boiling point: 65°C
Flash point: 11°C
Vapour pressure @ 20°C: 129 hPa
Methanol Molecule
Further Information
MSDS:
Safety Data Sheet Methanol (ULSI) english
Sicherheitsdatenblatt Methanol (ULSI) german
Specs:
Specs Methanol (ULSI)
Application Notes:
Solvents: Theory and Application english
Lösemittel: Theorie und Anwendung german
Further Information about Processing
MIBK - 2.50 l - VLSI - EVE/EUD!
TMIV1025
MIBK
Methyl Isobuthyl Ketone
General Information
MIBK is used in microelectronics as a developer for e-beam resists among other things.
Product Properties
Density: 0.80 g/cm3
Melting point: -80°C
Boiling point: 116°C
Flash point: 14°C
Vapour pressure @ 20°C: 19 hPa
MIBK Molecule
Further Information
MSDS:
Safety Data Sheet MIBK (VLSI) english
Sicherheitsdatenblatt MIBK (VLSI) german
Specs:
Specs MIBK (VLSI)
Application Notes:
Solvents: Theory and Application english
Lösemittel: Theorie und Anwendung german
Further Information about Processing
PGMEA - 5.00 l - ULSI
MPGU1050
PGMEA
1-methoxy-2-propyl-acetate
General Information
PGMEA is the main solvent/thinner of almost all AZ® and TI photoresists due to its low vapour pressure and its suppression of particle formation in the (further diluted) resist. Additionally, PGMEA is often used for edge bead removal, since its low vapour pressure prevents further thinning of the coated resist film.
Product Properties
Density: 0.97 g/cm3
Melting point: -66°C
Boiling point: 125°C
Flash point: 45°C
Vapour pressure @ 20°C: 5 hPa
PGMEA Molecule
Further Information
MSDS:
Safety Data Sheet PGMEA (ULSI) english
Sicherheitsdatenblatt PGMEA (ULSI) german
Specs:
Specs PGMEA (ULSI)
Application Notes:
Solvents: Theory and Application english
Lösemittel: Theorie und Anwendung german
Further Information about Processing
MC Spray Thinner MEK - 5.00 l
1SPTHM005
Bottle size:
5.00 l
MC Spray Thinner MEK
Solvent for Spray Coating
General Information
Spray Thinner MEK is a solvent for the production of a spray coating formulation. As the name suggests, this thinner is based on a formulation of MEK and various surfactants, which help to achieve an optimal spray coating result.
Spray coating formulations are often made from three components - the low-boiling Spray Thinner MEK, the high-boiling Spray Thinner PGMEA and the corresponding resist. Depending on the mixing ratio and the wanted result, the proportions of the substances must be adjusted.
A high proportion of PGMEA (low vapor pressure) creates very smooth layers with moderate edge coverage, while a formulation with a high MEK content (high vapor pressure) creates very good edge coverage but comparatively rough layers.
The optimal compromise of the solvent mixture is often a mixing ratio MEK: PGMEA of 1:3 to 3:1. Depending on the viscosity, required by the spray coating tool used, this solvent mixture is added to the resist in a ratio of 1:3 to 1:10. So one part resist to 3 parts solvent mixture up to one part resist to 10 parts solvent mixture.
Further Information
MSDS:
Safety Data Sheet MC Spray Thinner MEK english
Sicherheitsdatenblatt MC Spray Thinner MEK german
Application Notes:
Solvents: Theory and Application english
Lösemittel: Theorie und Anwendung german
Further Information about Processing
MC Spray Thinner PGMEA - 5.00 l
1SPTHP005
Bottle size:
5.00 l
MC Spray Thinner PGMEA
Solvent for Spray Coating
General Information
Spray Thinner PGMEA is a solvent for the production of a spray coating formulation. As the name suggests, this thinner is based on a formulation of PGMEA and various surfactants, which help to achieve an optimal spray coating result.
Spray coating formulations are often made from three components - the high-boiling Spray Thinner PGMEA, the low-boiling MEK Spray Thinner, and the corresponding resist. Depending on the mixing ratio and the wanted result, the proportions of the substances must be adjusted.
A high proportion of PGMEA (low vapour pressure) creates very smooth layers with moderate edge coverage, while a formulation with a high MEK content (high vapour pressure) creates very good edge coverage but comparatively rough layers.
The optimal compromise of the solvent mixture is often a mixing ratio MEK: PGMEA of 1:3 to 3:1. Depending on the viscosity, required by the spray coating tool used, this solvent mixture is added to the resist in a ratio of 1:3 to 1:10. So one part resist to 3 parts solvent mixture up to one part resist to 10 parts solvent mixture.
Further Information
MSDS:
Safety Data Sheet MC Spray Thinner PGMEA english
Sicherheitsdatenblatt MC Spray Thinner PGMEA german
Application Notes:
Solvents: Theory and Application english
Lösemittel: Theorie und Anwendung german
Further Information about Processing
AZ EBR Solvent - 5.00 l
1000002
Bottle size:
5.00 l
AZ® EBR Solvent
1-methoxy-2-propyl-acetate
General Information
AZ® EBR Solvent is the main solvent/thinner of almost all AZ® and TI photoresists due to its low vapour pressure and its suppression of particle formation in the (further diluted) resist. Additionally, PGMEA is often used for edge bead removal, since its low vapour pressure prevents further thinning of the coated resist film.
Product Properties
Density: 0.97 g/cm3
Melting point: -66°C
Boiling point: 125°C
Flash point: 45°C
Vapour pressure @ 20°C: 5 hPa
PGMEA Molecule
Further Information
MSDS:
Safety Data Sheet AZ® EBR Solvent english
Sicherheitsdatenblatt AZ® EBR Solvent german
TDS:
Technical Data Sheet AZ® EBR Solvent english
Remover
AZ 100 Remover - 5.00 l
1000100
AZ® 100 Remover
Universal Photoresist Stripper
General Information
AZ®100 Remover is based on solvent and amine (alkaline). AZ®100 Remover is used for photoresist stripping with low attack to aluminium. Low hazard is achieved by the use of ethanol amine.
Low evaporation rate allows the use at elevated temperatures (up to 80°C), high efficiency (>3000 wafer per litre) helps saving costs. Where attack to aluminium is of no concern, it may even be diluted with water.
AZ®100 Remover is not compatible with AZ® nLof 2070 (AZ® nLof 2000 series) resists and other heavily cross linked resists.
Product Properties
Density (at 25°C): 0.955 kg/l
Color (Alpha): max. 20
Flashpoint (AP): 72°C
Normality (potentiometric): 3.1 mol/l
Boiling range: 159-194°C
Further Information
MSDS:
Safety Data Sheet AZ® 100 Remover english
Sicherheitsdatenblatt AZ® 100 Remover german
TDS:
Technical Data Sheet AZ® 100 Remover english
Application Notes:
Photoresist removal english
Fotolack entfernen german
AZ Remover 910 - 5.00 l
1000910
AZ® Remover 910
Organic Solvent Based Remover
General Information
AZ® Remover 910 is designed to strip and dissolve positive and negative-tone, chemically amplified and DNQ/Novolak resists. It is a solvent based product that contains acids and is therefore acidic. The formulation is EH&S friendly, it contains no NMP, DMAC, DMSO and no TMAH and it is amine free.
It is especially suited for our cross-linking negative resists such as AZ® nLof 2070, 2035 and 2020, the AZ® nLof 5110 and the AZ® 15nXT series resists.
Compatibility
It is suitable for processes where sensitive metals and other materials are exposed.
It shows low etch rates on:
Al, Cu, Ti, W, TiW, TiN, Sn, Ni
Si, SiO2
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data Sheet AZ® Remover 910 english
Sicherheitsdatenblatt AZ® Remover 910 german
TDS:
Technical Data Sheet AZ® Remover 910 english
Application Notes:
Photoresist Removal english
Entfernen von Fotolack german
AZ Remover 920 - 5.00 l
1000920
AZ® Remover 920
Organic Solvent Based Remover
General Information
AZ® Remover 920 is designed for fast delamination and dissolution of photoresist patterns while maintaining broad compatibility with device substrates and metal films.
Merck’s proprietary solvent and additive blend is environmentally friendly and fully compliant with the European Union’s REACH regulatory code. Compatible with most AZ® positive resists (complete dissolution) and most AZ® negative resists (dissolution or delamination depending on degree of cross-linking).
Product Properties
Flashpoint: 84.4°C
Viscosity (20°C): 1.84 cSt
Boiling point: 188°C
Density (at 25°C): 1.084 g/cm3
Compatibility
Metals: no attack on Al, Cu, Ti, W, TiW, TiN, Sn, Ni
Substrates: Si, SiO2, GaAs
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Main Features
Fast delamination of photoresist patterns
Broad compatibility
Environmentally friendly
Some Applications
Bulk Photoresist Removal
Metal Lift-off Lithography
Cu Pillar Metallization Cleans
RDL Metallization Cleans
Delamination of Heavily Cured Photoresist Patterns & Organic Residues
Further Information
MSDS:
Safety Data Sheet AZ® Remover 920 english
Sicherheitsdatenblatt AZ® Remover 920 german
TDS:
Technical Data Sheet AZ® Remover 920 english
Application Notes:
Photoresist Removal english
Entfernen von Fotolack german
DMSO - 2.50 l - ULSI
MDMU1025
DMSO
Dimethyl Sulfoxide
General Information
Due to its low vapour pressure and its water solubility, DMSO is an excellent stripper for resists respectively Lift-off media and is a non-toxic substitute for the NMP, which has been classified as toxic since a while. The optional addition of Cyclopentanone or MEK increases the performance of the stripper for certain applications and significantly lowers the melting point of pure DMSO.
NOTE:
The solvent DMSO (dimethyl sulfoxide) has a melting point just below room temperature, so it can possi¬bly freeze in storage in cooler rooms. Thawing may require several days, but afterwards the product can still be used as it is.
For more details please download the info letter.
Product Properties
Density: 1.1 g/cm3
Melting point: 18°C
Boiling point: 189°C
Flash point: 87°C
Vapour pressure @ 20°C: 0.56 hPa
DMSO Molecule
Further Information
MSDS:
Safety Data Sheet DMSO (ULSI) english
Sicherheitsdatenblatt DMSO (ULSI) german
Specs:
Specs DMSO (ULSI)
Application Notes:
Solvents: Theory and Application english
Lösemittel: Theorie und Anwendung german
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniClean CA25 - 5.00 l - MOS
TTCA25M5
TechniCleanTM CA25
Post Etch Residue (PER) Remover
General Information
TechniCleanTM CA25 is a semi-aqueous proprietary blend formulated to address post etch residue (PER) removal for all interconnect and technology nodes. Extremely efficient in the rapid and selective removal of organo-metal oxides from Al, Cu, Ti, TiN, W and Ni.
Product Properties
Flashpoint: > 120°C
Water Solubility: Totally miscible
Viscosity (20°C): < 3 cP
Boiling point: 100°C
Density (at 20°C): 1.041 g/cm3
Compatibility
It removes organo-metal oxides from:
Metals: no attack on Al, Cu, Ti, TiN, W, Ni
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Main Features
Unmatched PER cleaning versatility
High efficiency at low temperature
No intermediary rinse
Low environmental impact (fluoride, amine, hydroxylamine and catechol free)
Cost efficiency
Further Information
MSDS:
Safety Data Sheet TechniClean™CA25 (MOS) english
Sicherheitsdatenblatt TechniClean™CA25 (MOS) german
TDS:
Technical Data Sheet TechniClean™CA25 (MOS) english
Specs:
Specs TechniClean™CA25 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniStrip Micro D2 - 5.00 l - VLSI
TPD2V500
TechniStrip® Micro D2
Remover with high metal and material compatibility
General Information
TechniStrip® Micro D2 is a versatile stripper which is dedicated to address resin lift off and dissolution on negative and positive tone resist. The organic mixture has the particularity to offer high metal and material compatibility allowing to be used on all stacks and particularly on sensitive substrates.
TechniStrip® Micro D2 is a very well suited substitute for the NMP and DMSO/Amine strippers, that are regarded as toxic since a while, or which are corrosive to some metals.
Product Properties
Flashpoint: 87°C
Water Solubility: Fully miscible
Boiling point: 190°C
Density (at 20°C): 1.113 g/cm3
Compatibility
Metals: no attack on Al, Cu, Ni, Ta, TaN, Ti, TiN, TiW, Au, Ag, Sn
Substrates: SiO2, Si
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Some Applications
Positive resin stripping
Negative tone resist lift off
Lift off process to pattern metals and dielectric layers
Reworking
Adhesive, glue cleaner
Further Information
MSDS:
Safety Data TechniStrip Micro D2 (VLSI) english
Sicherheitsdatenblatt TechniStrip Micro D2 (VLSI) german
TDS:
Technical Data Sheet TechniStrip Micro D2 (VLSI) english
Specs:
Specs TechniStrip Micro D2 (VLSI)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniStrip MLO-07 - 5.00 l - MOS
TPMLO075
TechniStrip® MLO07
DMSO-based Stripper
General Information
TechniStrip® MLO 07 is a highly efficient positive and negative tone photoresist remover used for IR, III/V, MEMS, Photonic, TSV mask, solder bumping and hard disk stripping applications. TechniStrip® MLO 07 is developed to address high dissolution performance and high material compatibility on Cu, Al, Sn/Ag, Alu¬mina and common organic substrates.
Product Properties
Flashpoint: 94°C
Water Solubility: Fully miscible
Boiling point: 189°C
Density (at 20°C): 1.093 g/cm3
Compatibility
Metals: no attack on Al, Cu, Ni, Ta, TaN, Ti, TiN, TiW, Au, Ag, Sn
Substrates: Si, SiO2
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Main Features
Improved performance over NMP in many applications
Provides dissolution for many positive resists
High material compatibility on Cu, Al, Sn, Ag, alumina, magnetic alloys and organic substrates
Ideally suited for gold and aluminum metal lift-off
Formulated to minimize the formation of metal fragments during the lift-off process
Some Applications
Metal Lift-Off Process
Further Information
MSDS:
Safety Data Sheet TechniStrip MLO-07 (MOS) english
Sicherheitsdatenblatt TechniStrip MLO-07 (MOS) german
TDS:
Technical Data Sheet TechniStrip MLO-07 (MOS) english
Specs:
Specs TechniStrip MLO-07 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniStrip NF26 - 5.00 l - MOS
TPNF2650
TechniStrip™ NF26
Dry Film Remover
General Information
TechniStrip™ NF26 is a highly effective negative tone photoresist remover used mainly for TSV mask and solder bumping applications.
Developed to address laminated photo-resins (dry-film resists) and liquid resins, the novel cleaning formulation TMAH-based showed high dissolution performance compared to standard TMAH-based blends. Additional advantages of the TechniStrip™ NF26 are its very high material compatibility compared to standard TMAH-based solutions. The intrinsic nature of the additives and solvent make the blend totally compatible with metals used throughout the BEOL interconnects to WLP bumping applications.
Product Properties
Flashpoint: 90°C
Viscosity (20°C): < 2cP
Water Solubility: Totally miscible
Boiling point: 189°C
Density (at 20°C): 1.02 g/cm3
Compatibility
Metals: no attack on Al, Cu, Ni, Ta, TaN, Ti, TiN, TiW, Ag, Sn
Substrates: Si, SiO2
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Main Features
Very high stripping rate, > 10µm/min
Great resin dissolution efficiency of dry film
Bath life up to 72 hours @ 70°C
Total metal compatibility, < 2 A/min @ 60°C
Complete water miscibility
Further Information
MSDS:
Safety Data Sheet TechniStrip NF26 (MOS) english
Sicherheitsdatenblatt TechniStrip NF26 (MOS) german
TDS:
Technical Data Sheet TechniStrip NF26 (MOS) english
Specs:
Specs TechniStrip NF26 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniStrip NF52 - 5.00 l - MOS
TPNF5250
TechniStrip™ NF52
Highly Effective Remover
General Information
TechniStrip™ NF52 is a highly effective remover for negative resists (liquid resists as well as dry films). The intrinsic nature of the additives and solvent make the blend totally compatible with metals used throughout the BEOL interconnects to WLP bumping applications.
Product Properties
Flashpoint: 90°C
Viscosity (20°C): < 2cP
Water Solubility: Totally miscible
Boiling point: 189°C
Density (at 20°C): 1.08 g/cm3
Compatibility
Metals: no attack on Al, Cu, Ni, Ta, TaN, Ti, TiN, TiW, Ag, Sn
Substrates: Si, SiO2
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Main Features
Very high stripping rate, >10µm/min
Great resin dissolution efficiency of dry film
Bath life up to 72 hours @ 70°C
Total metal compatibility, <2A/min @60°C
Complete water miscibility
Further Information
MSDS:
Safety Data Sheet TechniStrip NF52 (MOS) english
Sicherheitsdatenblatt TechniStrip NF52 (MOS) german
TDS:
Technical Data Sheet TechniStrip NF52 (MOS) english
Specs:
Specs TechniStrip NF52 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniStrip NI555 - 5.00 l - MOS
TNI555M5
TechniStrip® NI555
Stripper
General Information
TechniStrip® NI555 was developed to address fast and complete photoresist film dissolution thus avoiding filter clogging and subsequent insoluble resin debris deposition encountered with most of standard stripping solutions.
A cross-linked AZ® 15 nXT film peels from the substrate in DMSO-, NMP- or TMAH-based strippers, while TechniStrip® NI555 completely dissolves the resist film after 20 minutes.
Product Properties
Flashpoint: 89°C
Water Solubility: Totally miscible
Boiling point: 190°C
Density (at 20°C): 0.978 g/cm3
Compatibility
TechniStrip® NI555 is a powerful remover for Novolak-based negative resists and ultrathick positive resists such as:
AZ® nLOF200 series
AZ® 15nXT
AZ® 40XT
NOTE: Please note that the TechniStrip® NI555 is not compatible with GaAs**, which can cause problems in the application.
Metals: attacked GaAs
Metals: no attack on Al, Cu, Ni, Ta, TaN, Ti, TiN, TiW, Au, Ag, Sn, Pd
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data Sheet TechniStrip NI555 (MOS) english
Sicherheitsdatenblatt TechniStrip NI555 (MOS) german
TDS:
Technical Data Sheet TechniStrip NI555 (MOS) english
Specs:
Specs TechniStrip NI555 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniStrip P1316 - 5.00 l - MOS
TP1316M5
TechniStrip® P1316
High Performance Remover
General Information
TechniStrip® P1316 is a remover with very strong stripping power for Novolak-based resists (including all AZ® positive resists), epoxy-based coatings, polyimides and dry films. At a typical application temperatures around 75°C TechniStrip® P1316 may dissolve cross-linked resists without residue also, e.g. through dry etching or ion implantation. The remover can also be used in spraying processes.
Product Properties
Flashpoint: 93°C
Viscosity (20°C): < 2 cP
Water Solubility: Totally miscible
Boiling point: 189°C
Density (at 20°C): 1.03 g/cm3
Compatibility
Metals: attacked Al, Cu, Au
Metals: no attack on Ta, Ni, Ti, TiN
Substrates: Si, SiO2
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Some Applications
TechniStrip® P1316 is a powerful NMP-free remover for:
Novolak-based positive resists such as all positive AZ® resists
Epoxy-based resists
Polyimides, bonding glues
Dry films
Further Information
MSDS:
Safety Data Sheet TechniStrip P1316 (MOS) english
Sicherheitsdatenblatt TechniStrip P1316 (MOS) german
TDS:
Technical Data Sheet TechniStrip P1316 (MOS) english
Specs:
Specs TechniStrip P1316 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniStrip P1331 - 5.00 l - MOS
TP1331M
TechniStrip® P1331
High Performance Remover
General Information
TechniStrip® P1331 is a remover with very strong stripping power for Novolak-based resists (including all AZ® positive resists), epoxy-based coatings, polyimides and dry films. At a typical application temperatures around 75°C TechniStrip® P1331 may dissolve cross-linked resists without residue also, e.g. through dry etching or ion implantation. The remover can also be used in spraying processes.
TechniStrip® P1331 is, for alkaline sensitive materials, an alternative to the P1316.
Product Properties
Flashpoint: 100,5°C
Viscosity (20°C): < 2 cP
Water Solubility: Totally miscible
Boiling point: 189°C
Density (at 20°C): 1.109 g/cm3
Compatibility
Metals: attacked Al, Cu, Au
Metals: no attack on Ta, Ni, Ti, TiN
Substrates: Si, SiO2
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Main Features
Very high stripping rate, >10µm/min
Great resin dissolution efficiency
Enhanced resin loading capacity, > 2 times to standard POR
THB121N, 21µm, 8” wafer- up to 15 wafers/liter
Bath life up to 72 hours @ 70°C
Total metal compatibility, <10A/min @60°C
Complete water miscibility
Safety: labeled irritant
Some Applications
TechniStrip® P1316 is a powerful NMP-free remover for:
Novolak-based positive resists such as all positive AZ® resists
Epoxy-based resists
Polyimides, bonding glues
Dry films
Further Information
MSDS:
Safety Data Sheet TechniStrip P1331 (MOS) english
Sicherheitsdatenblatt TechniStrip P1331 (MOS) german
TDS:
Technical Data Sheet TechniStrip P1331 (MOS) english
Specs:
Specs TechniStrip P1331 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing