TechniEtch TBR 19 Concentrate - 2.50 l - MOS
TechniEtch™ TBR19 is a low undercut Ti etch chemistry concentrate for Cu bump pillars for self-mixing.
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Product number:
TETBR192
Product information "TechniEtch TBR 19 Concentrate - 2.50 l - MOS"
TechniEtch™ TBR19 Concentrate
Ti, TiW and TiN Etchant
General Information
TechniEtch™ TBR19 is a low undercut Ti etch chemistry concentrate for Cu bump pillars for self-mixing. TechniEtch™ TBR19 concentrate is compatible with most under bump metallization (UBM) and copper pillar integration materials such as Cu, Al, Ni and alloys, glass, organic substrate and most plastics like polypropylene, HDPE, PFA, PTFE Kalrez, PEEK, PE. The etching rate at 50°C is around 1000 A/min.
Note: To mix the TechniEtch™ TBR19 Concentrate correctly, a mixing ratio of 94 : 6 (94 wt % H2O2 and 6 wt % TBR19 concentrate additives) is recommended. This means that after mixing 500ml of TechniEtch™ TBR19 Concentrate with the corresponding amount of H2O2, you will obtain approx. 8 litres of the finished etching solution.
TBR19 (150°C 180s underetch smaller than 500nm)
Product Properties
- High selectivity
- Significant reduction of undercut compared to conventional SC1 and HF
- Long bath life
- Tunable etch rate
Selectivity
TechniEtch™ TBR19 is compatible/etches selective to following materials:
- Metals: no attack on Cu, Al, Ni, Sn
- Metals: attack on TiN, TiW, Ti, SnPd
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data TechniEtch TBR 19 (MOS) english
Sicherheitsdatenblatt TechniEtch TBR 19 (MOS) german
TDS:
Technical Data Sheet TechniEtch TBR 19 (MOS) english
Mixing Technical Data Sheet TechniEtch TBR 19 (MOS) english
Specs:
Specs TechniEtch TBR 19 (MOS)
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Wet Etching Metals english
Nasschemisches Ätzen von Metallen german
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Further Information
MSDS:
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Specs:
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General Information
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Product Properties
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Selectivity
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Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
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Further Information
MSDS:
Safety Data Sheet Au etch 200 english
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TDS:
Technical Data Sheet Au etch 200 english
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Application Notes:
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Further Information about Processing
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Activator
General Information
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Selectivity
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Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data Sheet AX 100 english
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TDS:
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Application Notes:
Further Information about Processing
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NOTE:
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Further Information
MSDS:
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Specs:
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General Information
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Selectivity
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Etching Rate
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Further Information
MSDS:
Safety Data Sheet Cr etch 210 english
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TDS:
Technical Data Sheet Cr etch 210 english
Technical Data Sheet Cr etch 210 german
Application Notes:
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General Information
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Selectivity
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Further Information
MSDS:
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TDS:
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Application Notes:
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Further Information
MSDS:
Safety Data Sheet Cu etch 150 english
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TDS:
Technical Data Sheet Cu etch 150 english
Technical Data Sheet Cu etch 150 german
Application Notes:
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Further Information about Processing
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General Information
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Product Properties
Selectivity to many materials, e.g. common metals used in electroplating industry
Very small dimension lost
Available in different purity grades
Compatible to resist masking
Usage at room temperature
Selectivity
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Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Ni, Au, Cr, Sn, Ti, Al, Pt
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Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
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Further Information
MSDS:
Safety Data Sheet Cu etch 200 english
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TDS:
Technical Data Sheet Cu etch 200 english
Technical Data Sheet Cu etch 200 german
Application Notes:
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Further Information about Processing
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General Information
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High etch rate at room temperature
Low surface tension for enhanced wetting property
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Loading & bath life independent of the solution Cu contamination level (up to 1g/l)
Enlarged loading capacity compared to standard I2/KI based solutions.
Better process controllability/reliability.
Low Toxicity compared to cyanide and HF/HNO3 based solutions
Selectivity
TechniEtch™ACI2 is compatible/etches selective to following materials:
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Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data TechniEtch™ACI2 (VLSI) english
Sicherheitsdatenblatt TechniEtch™ACI2 (VLSI) german
TDS:
Technical Data Sheet TechniEtch™ACI2 (VLSI) english
Specs:
Specs TechniEtch™ACI2 (VLSI)
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
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Further Information about Processing
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General Information
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Product Properties
High etch rate at room temperature.
High stability even in presence of metal contamination
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Selectivity
TechniEtch Al80 is compatible/etches selective to following materials:
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Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data TechniEtch Al80 (MOS) english
Sicherheitsdatenblatt TechniEtch Al80 (MOS) german
TDS:
Technical Data Sheet TechniEtch Al80 (MOS) english
Specs:
Specs TechniEtch Al80 (MOS)
Application Notes:
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Further Information about Processing
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General Information
TechniEtch™ CN10 is a copper and nickel etchant, which is a mixture of nitric- and phosphoric acid.
The etching process should be carried out with an addition of 8-16 % Hydrogenperoxide (30 %).
At 25° C the etching rate is approx. 0.3-0.4 µm per minute. Without the Addition of Hydrogenperoxide the etching rate is significantly lower and less homogenous.
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Product Properties
Better process controllability/reliability
High stability even in presence of metal contamination
Selectivity
TechniEtch™ CN10 is compatible/etches selective to following materials:
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Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data TechniEtch™ CN10 (MOS) english
Sicherheitsdatenblatt TechniEtch™ CN10 (MOS) german
TDS:
TF Technical Data Sheet TechniEtch™ CN10 (MOS) english
MC Technical Data Sheet TechniEtch™ CN10 (MOS) english
Mixing TechniEtch™ CN10 (MOS) english
Specs:
Specs TechniEtch™ CN10 (MOS)
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Wet Etching Metals english
Nasschemisches Ätzen von Metallen german
Further Information about Processing
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General Information
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TechniEtch Cr01 consists of ceric ammonium nitrate : Perchloric acid : water = 10.9% : 4.25% : 84.85% with an etching rate of about 60 nm/minute at room temperature comes in VLSI quality.
Product Properties
Cr etch rate at room temperature 60-100 nm/min
Al, Ti, W, Ni @ RT from 10nm/min to 200 nm/min
Cu, Ag, V are heavily etched > 200 nm/min
Au, Pd, Pt are compatible
Compatible with positive tone resin
Can be diluted down to adjust Cr etch rate
Selectivity
TechniEtch Cr01 is compatible/etches selective to following materials:
Metals: no attack on Au, Pd, Pt
Metals: attack on Cr, Fe, Mo, Ni, Al, Ti, W, Cu, Ag, V, Co, Mg, Mn, Sn
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data TechniEtch Cr01 (VLSI) english
Sicherheitsdatenblatt TechniEtch Cr01 (VLSI) german
TDS:
Technical Data Sheet TechniEtch Cr01 (VLSI) english
Specs:
Specs TechniEtch Cr01 (VLSI)
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Wet Etching Metals english
Nasschemisches Ätzen von Metallen german
Further Information about Processing
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General Information
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Product Properties
Low undercut (in the range of the layer thickness), minimum feature size < 1µm
Selectivity to many materials, e.g. common metals used in electroplating industry
Compatible to resist masking
Selectivity
TiW etch 100 is compatible/etches selective to following materials:
Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Au, Pt, Ni, Cr, Sn
Metals: attack on TiW, Cu
Cu impact at prolonged exposition
Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
Under normal condition, the etching rate is around 1nm/sec (at room temperature). The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%.
Further Information
MSDS:
Safety Data Sheet TiW etch 100 english
Sicherheitsdatenblatt TiW etch 100 german
TDS:
Technical Data Sheet TiW etch 100 english
Technisches Datenblatt TiW etch 100 german
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Wet Etching of Metals english
Nasschemisches Ätzen von Metallen german
Further Information about Processing
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nbttiw2005
Bottle size:
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Titan-Wolfram Etchant
General Information
TiW etch 200 is applied as etchant for titanium-for the wet-chemical patterning of TiW layers with selectivity to metals like Au, Pt, Ni, Cr. Usual applications are found in the semiconductor or microsystem technology field for etching adhesion layers or diffusion barriers.
Product Properties
Low undercut (in the range of the layer thickness), minimum feature size < 1µm
Selectivity to many materials, e.g. common metals used in electroplating industry
Compatible to resist masking
Selectivity
TiW etch 200 is compatible/etches selective to following materials:
Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Au, Pt, Ni, Cr
Metals: attacked TiW, Cu
Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
Under normal condition, the etching rate is around 5nm/min (at room temperature). The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%.
Further Information
MSDS:
Safety Data Sheet TiW etch 200 EN
Sicherheitsdatenblatt TiW etch 200 DE
TDS:
Technical Data Sheet TiW etch 200 EN
Technisches Datenblatt TiW etch 200 DE
Application Notes:
Wet Etching
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General Information
H2O2 is an ingredient of the Piranha-etch, RCA-1 and RCA-2 etching solutions, as well as etching solutions for various III/V-semiconductors.
H2O2 (30%) is available in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.
Further Information
MSDS:
Safety Data Sheet Hydrogen Peroxide 30% (VLSI) english
Sicherheitsdatenblatt Hydrogen Peroxide 30% (VLSI) german
Specs:
Specs Hydrogen Peroxide 30% (VLSI)
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Further Information about Processing