TI XLiftX - 1.00 l
MicroChemicals GmbH
TI xLift-X is an image reversal resist for the lift-off technique.
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Product number:
108001X
Manufacturer:
MicroChemicals GmbH
Product information "TI XLiftX - 1.00 l"
TI xLift-X
Image Reversal Resist
General Information
TI XLift-X allows resist thicknesses up to over 10 µm. However, as the resist thickness increases, the process becomes ever more time-consuming for rehydration or for the out gassing of the nitrogen formed during exposure. Thus a reasonable alternative for most applications would be the AZ® nLOF 2070 negative resist.
10.5 µm thick metal finger via lift-off with TI xLift-X
Product Properties
- Possible negative sidewall profile in image reversal mode
- Compatible with all common developers (NaOH-, KOH- or TMAH-based)
- Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
- g-, h- und i-line sensitive (approx. 320 - 440 nm)
- Resist film thickness range approx. 4 – 25 µm
Developers
We recommend the KOH-based AZ® 400K 1:3 - 1:4 diluted.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA.
Further Information
MSDS:
Safety Data Sheet TI xLift-X english
Sicherheitsdatenblatt TI xLift-X german
TDS:
Technical Data Sheet TI xLift-X english
Application Notes:
Further Information about Photoresist Processing
| Chemically amplified: | no |
|---|---|
| Film thickness: | 4 - 25 µm |
| Film thickness range: | medium (1.6 - 5.0µm), thick (> 5.1µm) |
| High thermal stability: | no |
| Mode: | image reversal, positive |
| Optimized for: | lift-off, wet etching |
Related products
AZ 5209-E Photoresist - 3.785 l
1A005209
AZ® 5209E
Image Reversal Resist for High Resolution
General Information
This special photoresist is the thinner version of the AZ® 5200E series intended for lift-off techniques which call for a negative side wall profile. The reversal bake moderately cross-links the exposed resist making the developed structures thermally stable up to approx. 130°C. Due to the comparably low resist film thickness of ~ 0.9 µm, the process parameter window for an undercut is rather small thus requiring some optimizations in the exposure dose and the reversal bake parameters. Therefore, if the resolution required is not in the sub-µm range, a thicker resist such as the AZ® LNR-003 (next section), or the AZ® nLOF 2000 negative resists might be a good alternative.
Product Properties
Very high resolution as a positive resist as well as a negative resist
Possible negative sidewall profile in image reversal mode
Compatible with all common developers (NaOH-, KOH- or TMAH-based)
Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
h- and i-line sensitive (approx. 320 - 405 nm)
Resist film thickness range approx. 0.7 - 1.2 µm
High thermal stability especially in image reversal mode
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 dilution recommended) is a suited developer.
The KOH-based AZ® 400K (also 1:4 - 1:5 diluted) is also possible.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 726 MIF or AZ® 326 MIF developer, normally undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer :1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA.
Further Information
MSDS:
Safety Data Sheet AZ® 5209-E Photoresist english
Sicherheitsdatenblatt AZ® 5209-E Fotolack german
TDS:
Technical Data Sheet AZ® 5209-E Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ 5214-E Photoresist - 3.785 l
1005214EJP
Bottle size:
3.785 l
AZ® 5214E
Image Reversal Resist for High Resolution
General Information
This special photoresist is intended for lift-off techniques which call for a negative side wall profile. The reversal bake moderately cross-links the exposed resist making the developed structures thermally stable up to approx. 130°C. Due to the comparably low resist film thickness of ~1.4 µm, the process parameter window for an undercut is rather small thus requiring some optimizations in the exposure dose and the reversal bake parameters. Therefore, if the resolution required is not in the sub-µm range, a thicker resist such as the AZ® LNR-003 (next section), or the AZ® nLOF 2000 negative resists might be a good alternative.
The undercut of AZ® 5214E attained under optimized process parameters.
Product Properties
Very high resolution as a positive resist as well as a negative resist
Possible negative sidewall profile in image reversal mode
Compatible with all common developers (NaOH-, KOH- or TMAH-based)
Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
h- and i-line sensitive (approx. 320 - 405 nm)
Resist film thickness range approx. 1.0 – 1.8 µm
High thermal stability especially in image reversal mode
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 dilution recommended) is a suited developer.
The KOH-based AZ® 400K (also 1:4 - 1:5 diluted) is also possible.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 726 MIF or AZ® 326 MIF developer, normally undiluted, or - for maximum resolution - moderately 3:1 - 2:1 ( 3 parts Developer :1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA.
Further Information
MSDS:
Safety Data Sheet AZ® 5214E Photoresist english
Sicherheitsdatenblatt AZ® 5214E Fotolack german
TDS:
Technical Data Sheet AZ® 5214E Photoresist english
Application Notes:
Further Information about Photoresist Processing
TI 35 E - 5.00 l
1035005
Bottle size:
5.00 l
TI 35E Photoresist
Image Reversal Resist
General Information
TI 35E for 2.5 - 5 µm Resist Film Thickness (g -, H - and I-line)
TI 35E is an image reversal resist with optimised adhesion, however compared with TI 35ESX, a lower sof¬tening temperature. As a result it is more suited for wet-chemical etching processes.
Product Properties
Optimized resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 2.5 - 5 µm
Developers
If metal ion containing developers can be used, the KOH-based AZ® 400K in a 1:4 dilution (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted).
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA.
Further Information
MSDS:
Safety Data Sheet TI 35E Photoresist english
Sicherheitsdatenblatt TI 35E Fotolack german
TDS:
Technical Data Sheet TI 35E Photoresist english
Application Notes:
Further Information about Photoresist Processing
TI 35 ESX - 5.00 l
1035005X
Bottle size:
5.00 l
TI 35ESX Photoresist
Image Reversal Resist
General Information
The TI 35 ESX resist is specially designed for the application in the so called “image reversal technology” for:
Subsequent lift-off of deposited layers with a thickness up to 4 µm
Plasma etching
The viscosity of the resist leads to a thickness range depending on the spin speed from 2.5 - 3.5 µm. The typical aspect ratio of the structured features achievable is in the range of 1.0 - 2.0. This technical data sheet intends to give you a guide-line for process parameters for various applications. However, the optimum values for e.g. spin profile, exposure dose or development depend on the individual equipment and need to be adjusted on each individual demand.
Due to the required second exposure, the process sequence will be easier with a negative resist like **AZ® nLof 20xx series and could be a good alternative.
Product Properties
Possible negative sidewall profile in image reversal mode
Compatible with all common developers (NaOH-, KOH- or TMAH-based)
Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
g-, h- und i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 2.5 – 3.5 µm
Developers
We recommend the TMAH-based developers AZ® 726 MIF, AZ® 2026 MIF or AZ® 400K 1:4 based on buffered KOH.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA.
Further Information
MSDS:
Safety Data Sheet TI 35ESX Photoresist english
Sicherheitsdatenblatt TI 35ESX Fotolack german
TDS:
Technical Data Sheet TI 35ESX Photoresist english
Application Notes:
Further Information about Photoresist Processing
TI Spray - 5.00 l
1030050n
Bottle size:
5.00 l
TI Spray
Image Reversal Resist
General Information
TI Spray for 1 - 20 µm Resist Film Thickness (g -, H - and I-line)
TI Spray is a ready-to-use spray resist whose low content of low-boiling solvent allows a smooth resist surface at the expense of a somewhat smaller edge coverage by slow drying of the resist film formed (If edge coverage is of highest importance, the use of AZ® 4999 should be considered as a good alternative).
It can be used in positive or in image-reversal (negative) mode. It can be used for wet chemical etching processes as well as for lift off applications.
Product Properties
Optimized resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 1 - 20 µm
Very smooth resist layers after spray coating on the price of lower edge coverage potential
Developers
If metal ion containing developers can be used, the KOH-based AZ® 400K in a 1:4 dilution (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted).
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA.
Further Information
MSDS:
Safety Data Sheet TI Spray english
Sicherheitsdatenblatt TI Spray german
TDS:
Technical Data Sheet TI Spray english
Application Notes:
Further Information about Photoresist Processing
Developer
AZ 400 K Developer - 5.00 l
1000400
AZ® 400K Developer
Inorganic Developers
General Information
AZ® 400K MIC is based on buffered KOH and typically used in a 1:3 to 1:4 dilution (1 part of concentrate and 4 parts of DI-water) and can be used especially for our thicker resist types, such as AZ® 4562, AZ® 10XT, and AZ® 40XT. In addition to the concentrate, a pre-diluted AZ® 400K 1:4 version is now also available, other dilution ratios on request.
Further Information
MSDS:
Safety Data Sheet AZ® 400K Developer english
Sicherheitsdatenblatt AZ® 400K Entwickler german
TDS:
Technical Data Sheet AZ® 400K Developer english
Information AZ® 400K Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 400 K Dev 1:4 - 5.00 l
1004145
AZ® 400K Developer 1:4
Inorganic Developers
General Information
In addition to the concentrate, a pre-diluted AZ® 400K 1:4 version is now also available, other dilution ratios on request.
AZ® 400K MIC Developer is based on buffered KOH and typically used in a 1:3 to 1:4 dilution (1 part of concentrate and 4 parts of DI-water) and can be used especially for our thicker resist types, such as AZ® 4562, AZ® 10XT, and AZ® 40XT.
Further Information
MSDS:
Safety Data Sheet AZ® 400K 1:4 Developer english
Sicherheitsdatenblatt AZ® 400K 1:4 Entwickler german
TDS:
Technical Data Sheet AZ® 400K 1:4 Developer english
Information AZ® 400K 1:4 Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 2026 MIF Developer - 5.00 l
1002026
AZ® 2026 MIF Developer
Metal Ion-free Developers
General Information
AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.
The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio.
However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs.
AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer.
Further Information
MSDS:
Safety Data Sheet AZ® 2026 MIF Developer english
Sicherheitsdatenblatt AZ® 2026 MIF Developer deutsch
TDS:
Technical Data Sheet AZ® 2026 MIF Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack deutsch
Remover
AZ 100 Remover - 5.00 l
1000100
AZ® 100 Remover
Universal Photoresist Stripper
General Information
AZ®100 Remover is based on solvent and amine (alkaline). AZ®100 Remover is used for photoresist stripping with low attack to aluminium. Low hazard is achieved by the use of ethanol amine.
Low evaporation rate allows the use at elevated temperatures (up to 80°C), high efficiency (>3000 wafer per litre) helps saving costs. Where attack to aluminium is of no concern, it may even be diluted with water.
AZ®100 Remover is not compatible with AZ® nLof 2070 (AZ® nLof 2000 series) resists and other heavily cross linked resists.
Product Properties
Density (at 25°C): 0.955 kg/l
Color (Alpha): max. 20
Flashpoint (AP): 72°C
Normality (potentiometric): 3.1 mol/l
Boiling range: 159-194°C
Further Information
MSDS:
Safety Data Sheet AZ® 100 Remover english
Sicherheitsdatenblatt AZ® 100 Remover german
TDS:
Technical Data Sheet AZ® 100 Remover english
Application Notes:
Photoresist removal english
Fotolack entfernen german
DMSO - 2.50 l - ULSI
MDMU1025
DMSO
Dimethyl Sulfoxide
General Information
Due to its low vapour pressure and its water solubility, DMSO is an excellent stripper for resists respectively Lift-off media and is a non-toxic substitute for the NMP, which has been classified as toxic since a while. The optional addition of Cyclopentanone or MEK increases the performance of the stripper for certain applications and significantly lowers the melting point of pure DMSO.
NOTE:
The solvent DMSO (dimethyl sulfoxide) has a melting point just below room temperature, so it can possi¬bly freeze in storage in cooler rooms. Thawing may require several days, but afterwards the product can still be used as it is.
For more details please download the info letter.
Product Properties
Density: 1.1 g/cm3
Melting point: 18°C
Boiling point: 189°C
Flash point: 87°C
Vapour pressure @ 20°C: 0.56 hPa
DMSO Molecule
Further Information
MSDS:
Safety Data Sheet DMSO (ULSI) english
Sicherheitsdatenblatt DMSO (ULSI) german
Specs:
Specs DMSO (ULSI)
Application Notes:
Solvents: Theory and Application english
Lösemittel: Theorie und Anwendung german
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniStrip P1316 - 5.00 l - MOS
TP1316M5
TechniStrip® P1316
High Performance Remover
General Information
TechniStrip® P1316 is a remover with very strong stripping power for Novolak-based resists (including all AZ® positive resists), epoxy-based coatings, polyimides and dry films. At a typical application temperatures around 75°C TechniStrip® P1316 may dissolve cross-linked resists without residue also, e.g. through dry etching or ion implantation. The remover can also be used in spraying processes.
Product Properties
Flashpoint: 93°C
Viscosity (20°C): < 2 cP
Water Solubility: Totally miscible
Boiling point: 189°C
Density (at 20°C): 1.03 g/cm3
Compatibility
Metals: attacked Al, Cu, Au
Metals: no attack on Ta, Ni, Ti, TiN
Substrates: Si, SiO2
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Some Applications
TechniStrip® P1316 is a powerful NMP-free remover for:
Novolak-based positive resists such as all positive AZ® resists
Epoxy-based resists
Polyimides, bonding glues
Dry films
Further Information
MSDS:
Safety Data Sheet TechniStrip P1316 (MOS) english
Sicherheitsdatenblatt TechniStrip P1316 (MOS) german
TDS:
Technical Data Sheet TechniStrip P1316 (MOS) english
Specs:
Specs TechniStrip P1316 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
AZ Remover 920 - 5.00 l
1000920
AZ® Remover 920
Organic Solvent Based Remover
General Information
AZ® Remover 920 is designed for fast delamination and dissolution of photoresist patterns while maintaining broad compatibility with device substrates and metal films.
Merck’s proprietary solvent and additive blend is environmentally friendly and fully compliant with the European Union’s REACH regulatory code. Compatible with most AZ® positive resists (complete dissolution) and most AZ® negative resists (dissolution or delamination depending on degree of cross-linking).
Product Properties
Flashpoint: 84.4°C
Viscosity (20°C): 1.84 cSt
Boiling point: 188°C
Density (at 25°C): 1.084 g/cm3
Compatibility
Metals: no attack on Al, Cu, Ti, W, TiW, TiN, Sn, Ni
Substrates: Si, SiO2, GaAs
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Main Features
Fast delamination of photoresist patterns
Broad compatibility
Environmentally friendly
Some Applications
Bulk Photoresist Removal
Metal Lift-off Lithography
Cu Pillar Metallization Cleans
RDL Metallization Cleans
Delamination of Heavily Cured Photoresist Patterns & Organic Residues
Further Information
MSDS:
Safety Data Sheet AZ® Remover 920 english
Sicherheitsdatenblatt AZ® Remover 920 german
TDS:
Technical Data Sheet AZ® Remover 920 english
Application Notes:
Photoresist Removal english
Entfernen von Fotolack german