TI 35 ESX - 5.00 l
TI 35ESX Photoresist
Image Reversal Resist
General Information
The TI 35 ESX resist is specially designed for the application in the so called “image reversal technology” for:
- Subsequent lift-off of deposited layers with a thickness up to 4 µm
- Plasma etching
The viscosity of the resist leads to a thickness range depending on the spin speed from 2.5 - 3.5 µm. The typical aspect ratio of the structured features achievable is in the range of 1.0 - 2.0. This technical data sheet intends to give you a guide-line for process parameters for various applications. However, the optimum values for e.g. spin profile, exposure dose or development depend on the individual equipment and need to be adjusted on each individual demand.
Due to the required second exposure, the process sequence will be easier with a negative resist like **AZ® nLof 20xx series and could be a good alternative.
Product Properties
- Possible negative sidewall profile in image reversal mode
- Compatible with all common developers (NaOH-, KOH- or TMAH-based)
- Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
- g-, h- und i-line sensitive (approx. 320 - 440 nm)
- Resist film thickness range approx. 2.5 – 3.5 µm
Developers
We recommend the TMAH-based developers AZ® 726 MIF, AZ® 2026 MIF or AZ® 400K 1:4 based on buffered KOH.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA.
Further Information
MSDS:
Safety Data Sheet TI 35ESX Photoresist english
Sicherheitsdatenblatt TI 35ESX Fotolack german
TDS:
Technical Data Sheet TI 35ESX Photoresist english
Application Notes:
Further Information about Photoresist Processing
| Chemically amplified: | no |
|---|---|
| Film thickness: | 2.5 –3.5 µm |
| Film thickness range: | medium (1.6 - 5.0µm) |
| High thermal stability: | no |
| Mode: | image reversal, positive |
| Optimized for: | lift-off |
Related products
Developer
Remover
