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Square Si + dry SiO2 wafer 10 x 10 mm 525 um (100) SSP

Prime Si + SiO2 (dry) (200 nm) wafer 525 µm 100

Product information "Square Si + dry SiO2 wafer 10 x 10 mm 525 um (100) SSP"

Prime Square Si + dry SiO2 wafer piece (10 x 10 mm), thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV, 1 - 10 Ohm cm, 200 nm dry SiO2, units of 30 pieces

Material: Si + SiO2 (dry) (200 nm)
Orientation: 100
Quality: Prime
Rectangular Size: 6 - 10 mm
SiO2 thickness: 100 - 200 nm
Surface: 1-side polished
Thickness: 501 - 700 µm