Si + wet SiO2 wafer 6 inch 675 um (100) SSP P-doped

Prime Si + SiO2 (wet) (0 nm) wafer 675 µm 100

Quantity	Unit price
To 4	€54.00*
To 9	€45.00*
To 24	€38.40*
To 49	€32.00*
To 99	€30.50*
From 100	€29.00*

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Product number: WWD6067525XP1314SXX1

Product information "Si + wet SiO2 wafer 6 inch 675 um (100) SSP P-doped"

Prime Si + wet SiO2 wafer 6 inch, thickness = 675 ± 25 µm, (100), 1-side polished, n-type (Phosphor), 1 - 10 Ohm cm, 1000 nm +/- 10 % thermally grown SiO2 on both sides, no second flat

Diameter (round):	6 inch
Material:	Si + SiO2 (wet) (0 nm)
Orientation:	100
Quality:	Prime
Resistivity:	1 - 10 Ohm cm
SiO2 thickness:	701 - 1000 nm
Surface:	1-side polished
Thickness:	501 - 700 µm