Si + wet SiO2 wafer 6 inch 675 um (100) SSP B-doped
Prime Si + SiO2 (wet) (0 nm) wafer 675 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€64.00*
|
| To 9 |
€54.00*
|
| To 24 |
€44.00*
|
| To 49 |
€34.00*
|
| To 99 |
€32.00*
|
| From 100 |
€30.00*
|
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Product number:
WWD60675250B1314SXX1
Product information "Si + wet SiO2 wafer 6 inch 675 um (100) SSP B-doped"
Prime Si + wet SiO2 wafer 6 inch, thickness = 675 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 1000 nm +/- 10 % thermally grown SiO2 on both sides, with laser-marking on non-polished side, code: MCN-XXX (XXX = 001 - 999)
| Diameter (round): | 6 inch |
|---|---|
| Material: | Si + SiO2 (wet) (0 nm) |
| Orientation: | 100 |
| Quality: | Prime |
| Resistivity: | 1 - 10 Ohm cm |
| SiO2 thickness: | 701 - 1000 nm |
| Surface: | 1-side polished |
| Thickness: | 501 - 700 µm |