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Si + wet SiO2 wafer 6 inch 675 um (100) SSP B-doped

Prime Si + SiO2 (wet) (300 nm) wafer 675 µm 100

Product information "Si + wet SiO2 wafer 6 inch 675 um (100) SSP B-doped"

Prime Si + dry/wet/dry SiO2 wafer 6 inch, thickness = 675 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 300 nm dry/wet/dry SiO2 (thermal grown on both sides)