Si + wet SiO2 wafer 4 inch 625 um (100) SSP P-doped

Prime Si + SiO2 (wet) (0 nm) wafer 625 µm 100

Quantity	Unit price
To 4	€48.50*
To 9	€38.50*
To 24	€32.50*
To 49	€26.50*
To 99	€24.50*
To 299	€22.50*
To 499	€18.50*
From 500	€18.00*

Prices excl. VAT plus shipping costs

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Product number: WWD40625250P1424SXX1

Product information "Si + wet SiO2 wafer 4 inch 625 um (100) SSP P-doped"

Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 625 ± 25 µm, (100), 1-side polished, n-type (Phosphor) TTV < 10 µm, 10 - 20 Ohm cm, 1000 nm SiO2 +/- 10 %, single flat 32,5 +/- 2,5 mm, no second flat

Diameter (round):	4 inch
Material:	Si + SiO2 (wet) (0 nm)
Orientation:	100
Quality:	Prime
Resistivity:	10 - 100 Ohm cm
SiO2 thickness:	701 - 1000 nm
Surface:	1-side polished
Thickness:	501 - 700 µm