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Si + wet SiO2 wafer 4 inch 625 um (100) SSP P-doped

Prime Si + SiO2 (wet) (0 nm) wafer 625 µm 100

Product information "Si + wet SiO2 wafer 4 inch 625 um (100) SSP P-doped"

Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 625 ± 25 µm, (100), 1-side polished, n-type (Phosphor) TTV < 10 µm, 10 - 20 Ohm cm, 1000 nm SiO2 +/- 10 %, single flat 32,5 +/- 2,5 mm, no second flat