Si + wet SiO2 wafer 4 inch 525 µm (100), SSP,B-doped
Prime Si + SiO2 (wet) (0 nm) wafer 525 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€48.00*
|
| To 9 |
€37.20*
|
| To 24 |
€31.60*
|
| To 49 |
€26.00*
|
| To 99 |
€24.00*
|
| To 199 |
€22.00*
|
| To 499 |
€20.00*
|
| From 500 |
€18.00*
|
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Product number:
WWD40525250B1314SXX1
Product information "Si + wet SiO2 wafer 4 inch 525 µm (100), SSP,B-doped"
Prime Si + SiO2 (dry/wet/dry)-Wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 1000 nm SiO2
| Diameter (round): | 4 inch |
|---|---|
| Material: | Si + SiO2 (wet) (0 nm) |
| Orientation: | 100 |
| Quality: | Prime |
| Resistivity: | 1 - 10 Ohm cm |
| SiO2 thickness: | 701 - 1000 nm |
| Surface: | 1-side polished |
| Thickness: | 501 - 700 µm |