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Si + wet SiO2 wafer 2 inch 279 um (100) SSP

Prime Si + SiO2 (wet) (250 nm) wafer 279 µm 100

Product information "Si + wet SiO2 wafer 2 inch 279 um (100) SSP"

Prime Si + dry/wet/dry SiO2 wafer 2 inch, thickness = 279 ± 25 µm, (100), 1-side polished, TTV < 10 µm, undoped, 1000 - 100000 Ohm cm, 250 nm SiO2, 2 Flats

Diameter (round): 2 inch
Material: Si + SiO2 (wet) (250 nm)
Orientation: 100
Quality: Prime
Resistivity: > 10000 Ohm cm
SiO2 thickness: 201 - 300 nm
Surface: 1-side polished
Thickness: 201 - 300 µm