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Si + wet SiO2 wafer 2 inch 279 um (100) SSP B-doped

Prime Si + SiO2 (wet) (500 nm) wafer 279 µm 100

Product information "Si + wet SiO2 wafer 2 inch 279 um (100) SSP B-doped"

Prime Si + wet SiO2 wafer 2 inch, thickness = 279 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 10 Ohm cm, 500 nm dry/wet/dry thermally grown SiO2