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Si + wet SiO2 wafer 2 inch 279 um (100) SSP B-doped

Prime Si + SiO2 (wet) (300 nm) wafer 279 µm 100

Product information "Si + wet SiO2 wafer 2 inch 279 um (100) SSP B-doped"

Prime Si + dry/wet/dry SiO2 wafer 2 inch, thickness = 279 ± 20 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 300 nm SiO2

Diameter (round): 2 inch
Material: Si + SiO2 (wet) (300 nm)
Orientation: 100
Quality: Prime
Resistivity: 1 - 10 Ohm cm
SiO2 thickness: 201 - 300 nm
Surface: 1-side polished
Thickness: 201 - 300 µm