Si + dry SiO2 wafer 6 inch 675 um (100) SSP B-doped
Prime Si + SiO2 (dry) (100 nm) wafer 675 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€56.00*
|
| To 9 |
€43.00*
|
| To 24 |
€36.40*
|
| To 49 |
€30.00*
|
| To 99 |
€29.00*
|
| To 199 |
€28.50*
|
| From 200 |
€28.00*
|
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Product number:
WTD60675250B1314S101
Product information "Si + dry SiO2 wafer 6 inch 675 um (100) SSP B-doped"
Prime Si + dry SiO2 wafer 6 inch, thickness = 675 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 100 nm thermal SiO2 on both sides
| Diameter (round): | 6 inch |
|---|---|
| Material: | Si + SiO2 (dry) (100 nm) |
| Orientation: | 100 |
| Quality: | Prime |
| Resistivity: | 1 - 10 Ohm cm |
| SiO2 thickness: | 100 - 200 nm |
| Surface: | 1-side polished |
| Thickness: | 501 - 700 µm |