Si + dry SiO2 wafer 4 inch 525 um (100) SSP P-doped
Prime Si + SiO2 (dry) (100 nm) wafer 525 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€42.00*
|
| To 9 |
€32.00*
|
| To 24 |
€26.00*
|
| To 49 |
€20.00*
|
| To 99 |
€19.00*
|
| To 199 |
€18.00*
|
| From 200 |
€17.00*
|
Send us an inquiry if you have any questions about articles, purchase quantities, delivery times or sample requests!
Product number:
WTD40525250P1314S101
Product information "Si + dry SiO2 wafer 4 inch 525 um (100) SSP P-doped"
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, n-type (Phosphor) TTV < 10 µm, 1 - 10 Ohm cm, 100 nm SiO2