Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
Dummy Si + SiO2 (dry) (280 nm) wafer 525 µm 100
| Quantity | Unit price |
|---|---|
| To 49 |
€20.00*
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| To 99 |
€18.00*
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| To 199 |
€16.00*
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| From 200 |
€14.00*
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No longer available - availability check on request
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Product number:
WTV40525250B1050S281
Product information "Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped"
Dummy Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.005 Ohm cm, 285 nm SiO2 +/- 5 %, laser marking on polished side (MCPHD003-XXX, XXX = 001-999), not-particle-specified, tiny defects in the SiO2 film