Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
Prime Si + SiO2 (dry) (90 nm) wafer 525 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€40.00*
|
| To 9 |
€34.00*
|
| To 24 |
€28.00*
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| To 49 |
€22.00*
|
| To 99 |
€21.00*
|
| To 149 |
€20.00*
|
| From 150 |
€19.50*
|
No longer available - availability check on request
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Product number:
WTD40525255B1011S091
Product information "Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped"
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 5 µm, 0.001 - 0.01 Ohm cm, 90 nm SiO2