Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
Prime Si + SiO2 (dry) (100 nm) wafer 525 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€44.00*
|
| To 9 |
€33.20*
|
| To 24 |
€27.60*
|
| To 49 |
€22.00*
|
| To 99 |
€20.00*
|
| From 100 |
€19.00*
|
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Product number:
WTD40525250B1314S102
Product information "Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped"
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 100 nm SiO2
| Diameter (round): | 4 inch |
|---|---|
| Material: | Si + SiO2 (dry) (100 nm) |
| Orientation: | 100 |
| Quality: | Prime |
| Resistivity: | 1 - 10 Ohm cm |
| SiO2 thickness: | 100 - 200 nm |
| Surface: | 1-side polished |
| Thickness: | 501 - 700 µm |