Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
Prime Si + SiO2 (dry) (280 nm) wafer 525 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€43.00*
|
| To 9 |
€37.00*
|
| To 24 |
€31.00*
|
| To 49 |
€24.50*
|
| To 149 |
€23.00*
|
| From 150 |
€21.00*
|
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Product number:
WTD40525250B1050S281
Product information "Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped"
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.001 - 0.005 Ohm cm, 285 nm SiO2 +/- 5 %, laser marking on polished side (MCPHD003-XXX, XXX = 001-999)
| Diameter (round): | 4 inch |
|---|---|
| Material: | Si + SiO2 (dry) (280 nm) |
| Orientation: | 100 |
| Quality: | Prime |
| Resistivity: | 0 - 0.01 Ohm cm |
| SiO2 thickness: | 201 - 300 nm |
| Surface: | 1-side polished |
| Thickness: | 501 - 700 µm |