Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped

Prime Si + SiO2 (dry) (290 nm) wafer 525 µm 100

Quantity	Unit price
To 4	€46.00*
To 9	€36.00*
To 24	€30.00*
To 49	€23.00*
To 99	€21.50*
To 199	€20.00*
From 200	€19.00*

Prices excl. VAT plus shipping costs

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Product number: WTD40525205B1050S291

Product information "Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped"

Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 20 µm, (100), 1-side polished, p-type (Boron), TTV < 5 µm, Bow/Warp < 30 µm, 0.001 - 0.005 Ohm cm, 290 nm SiO2 (+/- 7 %), particles: <10 @ 0.5 µm