Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped
Prime Si + SiO2 (dry) (290 nm) wafer 525 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€91.00*
|
| To 9 |
€86.00*
|
| To 24 |
€83.60*
|
| To 49 |
€77.60*
|
| From 50 |
€76.90*
|
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Product number:
MWCTI002PT020CCZZZ01
Product information "Si + dry SiO2 wafer 4 inch 525 um (100) SSP B-doped"
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 20 µm, (100), 1-side polished, p-type (Boron) TTV < 5 µm, 0.001 - 0.005 Ohm cm, 290 nm SiO2,