Si + dry SiO2 wafer 4 inch 525 um (100) SSP As-doped
Prime Si + SiO2 (dry) (200 nm) wafer 525 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€40.00*
|
| To 9 |
€33.00*
|
| To 24 |
€27.00*
|
| To 49 |
€21.00*
|
| To 99 |
€20.00*
|
| To 199 |
€19.00*
|
| From 200 |
€18.00*
|
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Product number:
WTD40525250A1050S201
Product information "Si + dry SiO2 wafer 4 inch 525 um (100) SSP As-doped"
Prime Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, n-type (Arsenic) TTV < 10 µm, 0.001 - 0.005 Ohm cm, 200 nm SiO2