Si + dry SiO2 wafer 3 inch 200 um (100) SSP B-doped
Prime Si + SiO2 (dry) (300 nm) wafer 200 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€35.50*
|
| To 9 |
€25.80*
|
| To 24 |
€21.00*
|
| To 49 |
€16.00*
|
| To 99 |
€15.00*
|
| From 100 |
€14.00*
|
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Product number:
WTD30200250B1314S301
Product information "Si + dry SiO2 wafer 3 inch 200 um (100) SSP B-doped"
Prime Si + dry SiO2 wafer 3 inch, thickness = 200 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 300 nm SiO2, 2 SEMI flats
| Diameter (round): | 3 inch |
|---|---|
| Material: | Si + SiO2 (dry) (300 nm) |
| Orientation: | 100 |
| Quality: | Prime |
| Resistivity: | 1 - 10 Ohm cm |
| SiO2 thickness: | 201 - 300 nm |
| Surface: | 1-side polished |
| Thickness: | 100 - 200 µm |