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Si + dry SiO2 wafer 3 inch 200 um (100) DSP

Prime Si + SiO2 (dry) (300 nm) wafer 200 µm 100

Product information "Si + dry SiO2 wafer 3 inch 200 um (100) DSP"

Prime FZ-Si + dry SiO2 wafer 3 inch, thickness = 200 ± 25 µm, (100), 2-side polished, TTV < 10 µm, 10000 - 100000 Ohm cm, (> 10.000), 300 nm SiO2, 2 SEMI flats