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Si + dry SiO2 wafer 100x100 mm 525 um (100) SSP

Prime Si + SiO2 (dry) (200 nm) wafer 525 µm 100

Product information "Si + dry SiO2 wafer 100x100 mm 525 um (100) SSP"

Prime Square Si + dry SiO2 wafer piece (100 x 100 mm), thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 200 nm dry SiO2 (thermally grown on both sides), units of 10 wafers