Skip to main content

Si + dry SiO2 wafer 1 inch 500 um (100) SSP

Prime Si + SiO2 (dry) (20 nm) wafer 500 µm 100

Product information "Si + dry SiO2 wafer 1 inch 500 um (100) SSP"

Prime FZ-Si + dry SiO2 wafer 1 inch, thickness = 500 ± 25 µm, (100), 1-side polished, TTV < 10 µm, 20 - 100000 Ohm cm, 25 nm thermal SiO2 (+/- 15 %, with +/- 10 % on best effort) on both sides, primary flat 8 mm, intrinsic/undoped