Si + dry SiO2 wafer 1 inch 500 um (100) SSP
Prime Si + SiO2 (dry) (20 nm) wafer 500 µm 100
| Quantity | Unit price |
|---|---|
| To 999 |
€9.00*
|
| From 1000 |
€9.00*
|
No longer available - availability check on request
Send us an inquiry if you have any questions about articles, purchase quantities, delivery times or sample requests!
Product number:
WTD10500250X2418S021
Product information "Si + dry SiO2 wafer 1 inch 500 um (100) SSP"
Prime FZ-Si + dry SiO2 wafer 1 inch, thickness = 500 ± 25 µm, (100), 1-side polished, TTV < 10 µm, 20 - 100000 Ohm cm, 25 nm thermal SiO2 (+/- 15 %, with +/- 10 % on best effort) on both sides, primary flat 8 mm, intrinsic/undoped
| Diameter (round): | 1 inch |
|---|---|
| Material: | Si + SiO2 (dry) (20 nm) |
| Orientation: | 100 |
| Quality: | Prime |
| Resistivity: | 1000 - 10000 Ohm cm |
| SiO2 thickness: | 0 - 100 nm |
| Surface: | 1-side polished |
| Thickness: | 401 - 500 µm |