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Si + SiO2 wafer 3 inch 380 um (100) SSP B-doped

Prime Si + SiO2 (wet) (90 nm) wafer 380 µm 100

Product information "Si + SiO2 wafer 3 inch 380 um (100) SSP B-doped"

Dummy Si + SiO2 wafer 3 inch, thickness = 380 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 10 Ohm cm, 90 nm SiO2, 1 SEMI flat, not particle-specified

Diameter (round): 3 inch
Material: Si + SiO2 (wet) (90 nm)
Orientation: 100
Quality: Prime
Resistivity: 1 - 10 Ohm cm
SiO2 thickness: 0 - 100 nm
Surface: 1-side polished
Thickness: 301 - 400 µm