Si + SiO2 wafer 3 inch 380 um (100) SSP B-doped
Prime Si + SiO2 (wet) (90 nm) wafer 380 µm 100
€10.00*
Send us an inquiry if you have any questions about articles, purchase quantities, delivery times or sample requests!
Product number:
WWD30380250B1314S092
Product information "Si + SiO2 wafer 3 inch 380 um (100) SSP B-doped"
Dummy Si + SiO2 wafer 3 inch, thickness = 380 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 10 Ohm cm, 90 nm SiO2, 1 SEMI flat, not particle-specified
Diameter (round): | 3 inch |
---|---|
Material: | Si + SiO2 (wet) (90 nm) |
Orientation: | 100 |
Quality: | Prime |
Resistivity: | 1 - 10 Ohm cm |
SiO2 thickness: | 0 - 100 nm |
Surface: | 1-side polished |
Thickness: | 301 - 400 µm |