Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped
Prime Si + Si3N4 (100 nm) wafer 525 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€57.00*
|
| To 9 |
€52.00*
|
| To 24 |
€45.00*
|
| To 49 |
€38.00*
|
| To 99 |
€36.00*
|
| From 100 |
€34.00*
|
Send us an inquiry if you have any questions about articles, purchase quantities, delivery times or sample requests!
Product number:
WNA40525155B1314S102
Product information "Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped"
Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 15 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 1 - 10 Ohm cm, 100 nm low-stress LPCVD Si3N4 on both sides
| Diameter (round): | 4 inch |
|---|---|
| Material: | Si + Si3N4 (100 nm) |
| Orientation: | 100 |
| Quality: | Prime |
| Resistivity: | 1 - 10 Ohm cm |
| Si3N4 thickness: | 100 - 200 nm |
| Surface: | 2-side polished |
| Thickness: | 501 - 700 µm |