Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped

Prime Si + Si3N4 (100 nm) wafer 525 µm 100

Quantity	Unit price
To 4	€57.00*
To 9	€52.00*
To 24	€45.00*
To 49	€38.00*
To 99	€36.00*
From 100	€34.00*

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Product number: WNA40525155B1314S102

Product information "Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped"

Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 15 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 1 - 10 Ohm cm, 100 nm low-stress LPCVD Si3N4 on both sides