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Si + Si3N4 wafer 4 inch 500 um (100) DSP

Dummy Si + Si3N4 (50 nm) wafer 500 µm 100

Product information "Si + Si3N4 wafer 4 inch 500 um (100) DSP"

Fused Silica JGS2 + Si3N4 wafer 4 inch, thickness = 500 ± 25 µm, (100), 2-side polished, + 50 nm low-stress LPCVD Si3N4 on both sides

Diameter (round): 4 inch
Material: Si + Si3N4 (50 nm)
Orientation: 100
Quality: Dummy
Si3N4 thickness: 0 - 100 nm
Surface: 2-side polished
Thickness: 401 - 500 µm