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Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped

Prime Si + Si3N4 (0 nm) wafer 380 µm 100

Product information "Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped"

Prime CZ-Si + Si3N4 wafer 4 inch, thickness = 380 ± 15 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 1000 nm LPCVD low-stress Si3N4 on both sides