Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped
Prime Si + Si3N4 (50 nm) wafer 380 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€64.00*
|
| To 9 |
€53.20*
|
| To 24 |
€47.60*
|
| To 49 |
€42.00*
|
| From 50 |
€40.00*
|
No longer available - availability check on request
Send us an inquiry if you have any questions about articles, purchase quantities, delivery times or sample requests!
Product number:
WNA40380155B1314S051
Product information "Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped"
Prime Si + Si3N4 (low-stress) wafer 4 inch, thickness = 380 ± 15 µm, (100), 2-side polished, p-type (Boron). TTV < 5 µm, 1 - 10 Ohm cm, 50 nm low-stress LPCVD Si3N4 on both sides
| Diameter (round): | 4 inch |
|---|---|
| Material: | Si + Si3N4 (50 nm) |
| Orientation: | 100 |
| Quality: | Prime |
| Resistivity: | 1 - 10 Ohm cm |
| Si3N4 thickness: | 0 - 100 nm |
| Surface: | 2-side polished |
| Thickness: | 301 - 400 µm |