Si + Si3N4 wafer 4 inch 260 um (100) DSP
Prime Si + Si3N4 (80 nm) wafer 260 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€82.00*
|
| To 9 |
€74.00*
|
| To 24 |
€66.00*
|
| From 25 |
€62.00*
|
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Product number:
WNA40260100X1718S081
Product information "Si + Si3N4 wafer 4 inch 260 um (100) DSP"
Prime FZ-Si + Si3N4 wafer 4 inch, thickness = 260 ± 10 µm, (100), 2-side polished, TTV < 10 µm, Bow/Warp < 30 µm, intrinsic/undoped, 10000 - 100000 Ohm cm, 80 +/- 20 nm (> 50 nm) LPCVD low-stress Si3N4 on both sides
| Diameter (round): | 4 inch |
|---|---|
| Material: | Si + Si3N4 (80 nm) |
| Orientation: | 100 |
| Quality: | Prime |
| Resistivity: | > 10000 Ohm cm |
| Si3N4 thickness: | 0 - 100 nm |
| Surface: | 2-side polished |
| Thickness: | 201 - 300 µm |