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Si + Si3N4 wafer 4 inch 260 um (100) DSP

Prime Si + Si3N4 (80 nm) wafer 260 µm 100

Product information "Si + Si3N4 wafer 4 inch 260 um (100) DSP"

Prime FZ-Si + Si3N4 wafer 4 inch, thickness = 260 ± 10 µm, (100), 2-side polished, TTV < 10 µm, Bow/Warp < 30 µm, intrinsic/undoped, 10000 - 100000 Ohm cm, 80 +/- 20 nm (> 50 nm) LPCVD low-stress Si3N4 on both sides