Si + Si3N4 wafer 3 inch 381 um (100) DSP B-doped
Prime Si + Si3N4 (500 nm) wafer 381 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€67.50*
|
| To 9 |
€57.80*
|
| To 24 |
€53.00*
|
| To 49 |
€48.00*
|
| To 99 |
€47.00*
|
| From 100 |
€46.00*
|
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Product number:
WNA30381250B1314S502
Product information "Si + Si3N4 wafer 3 inch 381 um (100) DSP B-doped"
Prime Si + Si3N4 (low-stress) wafer 3 inch, thickness = 381 ± 25 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 500 nm low-stress Si3N4
| Diameter (round): | 3 inch |
|---|---|
| Material: | Si + Si3N4 (500 nm) |
| Orientation: | 100 |
| Quality: | Prime |
| Resistivity: | 1 - 10 Ohm cm |
| Si3N4 thickness: | 401 - 500 nm |
| Surface: | 2-side polished |
| Thickness: | 301 - 400 µm |