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Si + Si3N4 wafer 3 inch 381 um (100) DSP B-doped

Prime Si + Si3N4 (50 nm) wafer 381 µm 100

Product information "Si + Si3N4 wafer 3 inch 381 um (100) DSP B-doped"

Prime Si + Si3N4 wafer 3 inch, thickness = 381 ± 25 µm, (100), 2-side polished, p-type (Boron), 1 - 10 Ohm cm, 50 nm LPCVD Si3N4 on both sides