Si + Si3N4 wafer 3 inch 381 um (100) DSP B-doped
From
€27.50*
WNA30381250B1314S051
Prime Si + Si3N4 wafer 3 inch, thickness = 381 ± 25 µm, (100), 2-side polished, p-type (Boron), 1 - 10 Ohm cm, 50 nm LPCVD Si3N4 on both sides
Si + Si3N4 wafer 3 inch 381 um (100) DSP B-doped
From
€33.00*
WNA30381250B1314S151
Prime Si + Si3N4 wafer 3 inch, thickness = 381 ± 25 µm, (100), 2-side polished, p-type (Boron), 1 - 10 Ohm cm, 150 nm LPCVD Si3N4 on both sides
Si + Si3N4 wafer 3 inch 381 um (100) DSP B-doped
From
€45.00*
WNA30381250B1314S501
Prime Si + Si3N4 wafer 3 inch, thickness = 381 ± 25 µm, (100), 2-side polished, p-type (Boron), 1 - 10 Ohm cm, 500 nm PECVD Si3N4 on one side
Si + Si3N4 wafer 3 inch 381 um (100) DSP B-doped
From
€46.00*
WNA30381250B1314S502
Prime Si + Si3N4 (low-stress) wafer 3 inch, thickness = 381 ± 25 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 500 nm low-stress Si3N4
Si + Si3N4 wafer 3 inch 381 um (100) DSP B-doped
From
€61.00*
WNA30381250B1314SXX2
Prime Si + Si3N4 (low-stress) wafer 3 inch, thickness = 381 ± 25 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 1000 nm low-stress Si3N4
Si + Si3N4 wafer 4 inch 200 um (100) DSP B-doped
From
€48.00*
WNA40200105B1314S061
Prime Si + Si3N4 wafer 4 inch, thickness = 200 ± 10 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 1 - 10 Ohm cm, 60 nm low-stress LPCVD Si3N4 (50 - 70 nm)
Si + Si3N4 wafer 4 inch 200 um (100) DSP B-doped
From
€50.00*
WNA40200105B1314S202
Prime Si + Si3N4 wafer 4 inch, thickness = 200 ± 10 µm, (100), 2-side polished, p-type (Boron) TTV < 5 µm, 1 - 10 Ohm cm, 200 nm low-stress LPCVD Si3N4 on both sides
Si + Si3N4 wafer 4 inch 260 um (100) DSP
From
€62.00*
WNA40260100X1718S081
Prime FZ-Si + Si3N4 wafer 4 inch, thickness = 260 ± 10 µm, (100), 2-side polished, TTV < 10 µm, Bow/Warp < 30 µm, intrinsic/undoped, 10000 - 100000 Ohm cm, 80 +/- 20 nm (> 50 nm) LPCVD low-stress Si3N4 on both sides
Si + Si3N4 wafer 4 inch 325 um (100) SSP B-doped
From
€39.00*
WND40325250B1314S081
Prime Si + Si3N4 wafer 4 inch, thickness = 325 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 10 Ohm cm, 80 nm stoichiometric LPCVD Si3N4 on both sides
Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped
From
€40.00*
WNA40380155B1314S051
Prime Si + Si3N4 (low-stress) wafer 4 inch, thickness = 380 ± 15 µm, (100), 2-side polished, p-type (Boron). TTV < 5 µm, 1 - 10 Ohm cm, 50 nm low-stress LPCVD Si3N4 on both sides
Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped
From
€44.50*
WNA40380155B1314S071
Prime Si + LPCVD Si3N4 wafer 4 inch, thickness = 380 ± 15 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 1 - 10 Ohm cm, 75 nm Si3N4
Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped
From
€37.00*
WNA40380155B1314S151
Prime CZ-Si + Si3N4 wafer 4 inch, thickness = 380 ± 15 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 145 nm LPCVD Si3N4 on both sides
Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped
From
€44.00*
WNA40380155B1314S401
Prime Si + Si3N4 wafer 4 inch, thickness = 380 ± 15 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 1 - 10 Ohm cm, 400 nm LPCVD low-stress Si3N4 on both sides
Si + Si3N4 wafer 4 inch 380 um (100) DSP B-doped
From
€68.00*
WNA40380155B1314SXX1
Prime CZ-Si + Si3N4 wafer 4 inch, thickness = 380 ± 15 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 1000 nm LPCVD low-stress Si3N4 on both sides
Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped
From
€40.00*
WNA40525155B1314S031
Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 15 µm, (100), 2-side polished, p-type (Boron) TTV < 5 µm, 1 - 10 Ohm cm, 30 nm low-stress LPCVD Si3N4 on both wafer sides
Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped
From
€34.00*
WNA40525155B1314S102
Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 15 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 1 - 10 Ohm cm, 100 nm low-stress LPCVD Si3N4 on both sides
Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped
From
€50.00*
WNA40525155B1314S501
Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 15 µm, (100), 2-side polished, p-type (Boron) TTV < 5 µm, 1 - 10 Ohm cm, 500 nm low-stress LPCVD Si3N4 on both sides
Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped
From
€43.00*
WNA40525255B1314S041
Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 25 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 1 - 10 Ohm cm, 40 nm low-stress Si3N4
Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped
From
€39.00*
WNA40525255B1314S301
Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 25 µm, (100), 2-side polished, p-type (Boron) TTV < 5 µm, 1 - 10 Ohm cm, 300 nm LPCVD Si3N4 on both sides
Si + Si3N4 wafer 4 inch 525 um (100) DSP B-doped
From
€56.00*
WNA40525255B1314S451
Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 25 µm, (100), 2-side polished, p-type (Boron) TTV < 5 µm, 1 - 10 Ohm cm, 450 nm low-stress LPCVD Si3N4 on both sides