CZ-Si wafer 1 inch 150 um (100) DSP B-doped
From
€8.00*
WSA10150250B8021XNN1
Prime CZ-Si wafer 1 inch, thickness = 150 ± 25 µm, (100), 2-side polished, p-type (Boron), 0.008 - 0.02 Ohm cm, no flat
CZ-Si wafer 1 inch 200 um (100) DSP B-doped
From
€4.80*
WSA10200250B1314XNN1
Prime CZ-Si wafer 24.5 +/- 0.3 mm diameter, thickness = 200 ± 25 µm, (100), 2-side polished, p-type (Boron), TTV < 10 µm, 1 - 10 Ohm cm, !! no flat !!, units of 50 wafers stacked in cakeboxes
CZ-Si wafer 1 inch 2500 um (100) SSP B-doped
From
€11.00*
WSV12500500B1314XNN1
CZ-Si wafer 33 mm diameter, thickness = 2500 ± 50 µm, (100), 1-side polished (optical grade), p-type (Boron), 1 - 10 Ohm cm, no flat
CZ-Si wafer 1 inch 275 um (100) SSP B-doped
From
€2.70*
WSV10275250B1324XNN1
Dummy CZ-Si wafer 1 inch, thickness = 275 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 20 Ohm cm, no flat, units of 25 wafers, not particle specified (packaging leaves back particles which need to be cleaned before being used in particle-critical applications)
CZ-Si wafer 1 inch 275 um (100) SSP B-doped
From
€4.40*
WSD10275250B1324XNN1
Prime CZ-Si wafer 1 inch, thickness = 275 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 20 Ohm cm, 1 flat (8+/-2mm length), units of 25 wafers stacked in blister boxes
CZ-Si wafer 1 inch 280 um (100) DSP B-doped
From
€4.60*
WSA10280250B1314XNN1
Prime CZ-Si wafer 1 inch, thickness = 280 ± 25 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, no flat, units of 50 wafers stacked in cakeboxes
CZ-Si wafer 1 inch 280 um (100) SSP As-doped
From
€4.80*
WSD10280250A1050SNN1
Prime CZ-Si wafer 1 inch, thickness = 280 ± 25 µm, (100), 1-side polished, TTV < 10 µm, 0.001 - 0.005 Ohm cm, no flat
CZ-Si wafer 1 inch 280 um (100) SSP B-doped
From
€4.00*
WSD10280250B1051XNN1
Prime CZ-Si wafer 1 inch, thickness = 280 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 0.001 - 0.05 Ohm cm, no flat
CZ-Si wafer 1 inch 280 um (100) SSP B-doped
From
€4.20*
WSD10280250B1324SNN1
Prime CZ-Si wafer 1 inch, thickness = 280 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 20 Ohm cm, 1 Flat (8+/-2mm)
CZ-Si wafer 1 inch 625 um (100) SSP B-doped
From
€2.90*
WSD10625250B1324XNN1
Prime CZ-Si wafer 1 inch, thickness = 625 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 20 Ohm cm, no Flat
CZ-Si wafer 100 x 100 mm 625 um (100) SSP
From
€17.00*
W9SD1001000625XXXNB1
Prime CZ-Si wafer piece (100 x 100 mm), thickness = 625 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 20 Ohm cm, units of 25 wafers
CZ-Si wafer 12 inch 755 um (100) DSP
From
€14.00*
WSSA0755500X1017XNN1
Dummy CZ-Si wafer 12 inch (300 mm), thickness = 755 ± 50 µm, (100), 2-side polished, 0.001 - 10000 Ohm cm, p- and n-type mixed (> 90 % p-type), 1 notch, units of 50 wafers stacked in cakeboxes, not particle-specified, tiny scratches possible
CZ-Si wafer 12 inch 775 um (100) DSP B-doped
From
€19.00*
WSSA0775250B1315SNN1
Dummy CZ-Si wafer 12 inch, thickness = 775 ± 25 µm, (100), 2-side polished, p-type (Boron), 1 - 100 Ohm cm, SEMI notch, not particle specified, tiny scratches possible, units of 50 wafers/cakebox
CZ-Si wafer 2 inch 0279 µm (100), 2-sd. pol.B-doped
From
€7.50*
WSA20279200B1314SNN1
Prime CZ-Si-Wafer 2 inch, thickness = 279 ± 20 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm
CZ-Si wafer 2 inch 0279 µm (100), SSP,P-doped
From
€5.60*
WSD20279200P1314SNN1
Prime CZ-Si-Wafer 2 inch, thickness = 279 ± 20 µm, (100), 1-side polished, n-type (Phosphor) TTV < 10 µm, 1 - 10 Ohm cm
CZ-Si wafer 2 inch 200 um (100) DSP B-doped
From
€7.50*
WSA20200105B1314SNN1
Prime CZ-Si wafer 2 inch, thickness = 200 ± 10 µm, (100), 2-side polished, p-type (Boron) TTV < 5 µm, 1 - 10 Ohm cm, 1 SEMI flat
CZ-Si wafer 2 inch 2000 um (100) SSP B-doped
From
€12.00*
WSD22000250B1324SNN1
Prime CZ-Si wafer 2 inch, thickness = 2000 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 20 Ohm cm, Flat: SEMI Standard, units of 25 wafers stacked
CZ-Si wafer 2 inch 279 um (100) SSP B-doped
From
€4.80*
WSM20279250B1324SNN1
Test CZ-Si wafer 2 inch, thickness = 279 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 20 Ohm cm
CZ-Si wafer 2 inch 280 um (100) SSP As-doped
From
€6.00*
WSD20280150A1050SNN1
Prime CZ-Si wafer 2 inch, thickness = 280 ± 15 µm, (100), 1-side polished, TTV < 10 µm, n-type (Arsen), 0.001 - 0.005 Ohm cm
CZ-Si wafer 2 inch 280 um (100) SSP B-doped
From
€6.50*
WSD20280100B1121SNN2
Prime CZ-Si wafer 2 inch, thickness = 280 ± 10 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 0.01 - 0.02 Ohm cm, Flats: 1, [InvP]
CZ-Si wafer 2 inch 280 um (100) SSP B-doped
From
€5.20*
WSD20280250B1314SNN1
Prime CZ-Si wafer 2 inch, thickness = 280 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm
CZ-Si wafer 2 inch 280 um (100) unpol. P-doped
From
€4.80*
WSG20280250P1324SNN1
Prime CZ-Si wafer 2 inch, thickness = 280 ± 25 µm, (100), unpolished, n-type (Phosphor) TTV < 10 µm, 1 - 20 Ohm cm
CZ-Si wafer 2 inch 3000 um (100) SSP As-doped
From
€17.00*
WSD23000250A1050SNN1
Prime CZ-Si wafer 2 inch, thickness = 3000 ± 25 µm, (100) +/- 0.5°, 1-side polished, n-type (Arsen), 0.001 - 0.005 Ohm cm, TTV < 10 µm, Bow/Warp < 30 µm, 1 SEMI Flat
CZ-Si wafer 2 inch 3000 um (100) SSP As-doped
€23.00*
WSD23000250A1050SNN2
Prime CZ-Si wafer 2 inch, thickness = 3000 ± 25 µm, (100) off orientation 6° (+/- 0.5°), 1-side polished, n-type (Arsen), 0.001 - 0.005 Ohm cm, TTV < 10 µm, Bow/Warp < 30 µm, 1 SEMI Flat